ZXMN6A08KTC
  • Share:

Diodes Incorporated ZXMN6A08KTC

Manufacturer No:
ZXMN6A08KTC
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXMN6A08KTC Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 5.36A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:5.36A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:80mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:459 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):2.12W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$0.64
192

Please send RFQ , we will respond immediately.

Similar Products

Part Number ZXMN6A08KTC ZXMN6A09KTC  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 5.36A (Ta) 7.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 4.8A, 10V 40mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.8 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 459 pF @ 40 V 1426 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 2.12W (Ta) 2.15W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252-3 TO-252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

IPP60R125CPXKSA1
IPP60R125CPXKSA1
Infineon Technologies
MOSFET N-CH 650V 25A TO220-3
ISL9N310AP3
ISL9N310AP3
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
IPD082N10N3GATMA1
IPD082N10N3GATMA1
Infineon Technologies
MOSFET N-CH 100V 80A TO252-3
IPB180P04P4L02ATMA1
IPB180P04P4L02ATMA1
Infineon Technologies
MOSFET P-CH 40V 180A TO263-7
IXFH120N30X3
IXFH120N30X3
IXYS
MOSFET N-CH 300V 120A TO247
SIHB105N60EF-GE3
SIHB105N60EF-GE3
Vishay Siliconix
MOSFET N-CH 600V 29A D2PAK
IRFL214TR
IRFL214TR
Vishay Siliconix
MOSFET N-CH 250V 790MA SOT223
FQD3N30TM
FQD3N30TM
onsemi
MOSFET N-CH 300V 2.4A DPAK
FCD5N60TF
FCD5N60TF
onsemi
MOSFET N-CH 600V 4.6A DPAK
NTD78N03-35G
NTD78N03-35G
onsemi
MOSFET N-CH 25V 11.4A/78A IPAK
IXFC13N50
IXFC13N50
IXYS
MOSFET N-CH 500V 12A ISOPLUS220
SUP40N10-30-E3
SUP40N10-30-E3
Vishay Siliconix
MOSFET N-CH 100V 40A TO220AB

Related Product By Brand

FP0730016
FP0730016
Diodes Incorporated
CRYSTAL 7.3728MHZ 20PF SMD
FK0730002
FK0730002
Diodes Incorporated
XTAL OSC XO 7.3728MHZ CMOS
UX3213E0050.000000
UX3213E0050.000000
Diodes Incorporated
XTAL OSC XO 50.0000MHZ CMOS SMD
1N4937G-T
1N4937G-T
Diodes Incorporated
DIODE GEN PURP 600V 1A DO41
FR805
FR805
Diodes Incorporated
DIODE GEN PURP 600V 8A TO220A
PI49FCT3805AQ
PI49FCT3805AQ
Diodes Incorporated
IC CLK BUFFER 1:5 66MHZ 20QSOP
74AUP1G07FW4-7
74AUP1G07FW4-7
Diodes Incorporated
IC BUFFER NON-INVERT 3.6V 6DFN
APX812-46UG-7
APX812-46UG-7
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT143
APX803L-19SA-7
APX803L-19SA-7
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23
APX824-46W5G-7
APX824-46W5G-7
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT25
AP1501-33K5G-13
AP1501-33K5G-13
Diodes Incorporated
IC REG BUCK 3.3V 3A TO263-5
AP2204R-5.0TRG1
AP2204R-5.0TRG1
Diodes Incorporated
IC REG LINEAR 5V 150MA SOT89-3