ZXMN6A08E6TC
  • Share:

Diodes Incorporated ZXMN6A08E6TC

Manufacturer No:
ZXMN6A08E6TC
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXMN6A08E6TC Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 2.8A SOT26
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:80mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:459 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):1.1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-26
Package / Case:SOT-23-6
0 Remaining View Similar

In Stock

-
231

Please send RFQ , we will respond immediately.

Similar Products

Part Number ZXMN6A08E6TC ZXMN6A08E6TA  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Ta) 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 4.8A, 10V 80mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.8 nC @ 10 V 5.8 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 459 pF @ 40 V 459 pF @ 40 V
FET Feature - -
Power Dissipation (Max) 1.1W (Ta) 1.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-26 SOT-26
Package / Case SOT-23-6 SOT-23-6

Related Product By Categories

BUK724R5-30C118
BUK724R5-30C118
NXP USA Inc.
N-CHANNEL POWER MOSFET
FDZ375P
FDZ375P
onsemi
MOSFET P-CH 20V 3.7A 4WLCSP
DMN3110S-7
DMN3110S-7
Diodes Incorporated
MOSFET N-CH 30V 2.5A SOT-23
TPH1R405PL,L1Q
TPH1R405PL,L1Q
Toshiba Semiconductor and Storage
MOSFET N-CH 45V 120A 8SOP
IPB120P04P4L03ATMA2
IPB120P04P4L03ATMA2
Infineon Technologies
MOSFET P-CH 40V 120A TO263-3
DMN53D0LQ-13
DMN53D0LQ-13
Diodes Incorporated
MOSFET N-CH 50V 500MA SOT23
PCP1402-TD-H
PCP1402-TD-H
onsemi
MOSFET N-CH 250V 1.2A SOT89
BUK625R0-40C,118
BUK625R0-40C,118
NXP Semiconductors
NEXPERIA BUK625R0-40C - 90A, 40V
2SK3046
2SK3046
Panasonic Electronic Components
MOSFET N-CH 500V 7A TO220D-A1
IRF7523D1TR
IRF7523D1TR
Infineon Technologies
MOSFET N-CH 30V 2.7A MICRO8
IRL3103LPBF
IRL3103LPBF
Infineon Technologies
MOSFET N-CH 30V 64A TO262
AON6400L_002
AON6400L_002
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 31A/85A 8DFN

Related Product By Brand

FL4000289Q
FL4000289Q
Diodes Incorporated
CRYSTAL 40.0000MHZ 12PF SMD
AZ23C3V3-7
AZ23C3V3-7
Diodes Incorporated
DIODE ZENER ARRAY 3.3V SOT23-3
ZXTPS717MCTA
ZXTPS717MCTA
Diodes Incorporated
TRANS PNP 12V 4.4A DFN3020B-8
FZT955TC
FZT955TC
Diodes Incorporated
TRANS PNP 140V 4A SOT223-3
ADTC114ECAQ-7
ADTC114ECAQ-7
Diodes Incorporated
PREBIAS TRANSISTOR SOT23 T&R 3K
DMN3025LFDF-7
DMN3025LFDF-7
Diodes Incorporated
MOSFET N-CH 30V 9.9A 6UDFN
PI5C3384S
PI5C3384S
Diodes Incorporated
IC BUS SWITCH 5 X 1:1 20SOIC
PI3C3126Q
PI3C3126Q
Diodes Incorporated
IC BUS SWITCH 1 X 1:1 16QSOP
AL1692-30BS7-13
AL1692-30BS7-13
Diodes Incorporated
IC LED DRIVER OFFL TRIAC 3A 7SO
AZ7023RTR-E1
AZ7023RTR-E1
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT89
AP7343D-17FS4-7B
AP7343D-17FS4-7B
Diodes Incorporated
IC REG LINEAR 1.7V 300MA 4DFN
AH1894-Z-7
AH1894-Z-7
Diodes Incorporated
MAGNETIC SWITCH OMNIPOLAR SOT553