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| Part Number | ZXMN6A08E6TA | ZXMN6A08E6TC | ZXMN6A08E6QTA |
|---|---|---|---|
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Status | Active | Obsolete | Active |
| FET Type | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Ta) | 2.8A (Ta) | 2.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 4.8A, 10V | 80mOhm @ 4.8A, 10V | 80mOhm @ 4.8A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA | 1V @ 250µA | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 5.8 nC @ 10 V | 5.8 nC @ 10 V | 5.8 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 459 pF @ 40 V | 459 pF @ 40 V | 459 pF @ 40 V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | 1.1W (Ta) | 1.1W (Ta) | 1.1W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | SOT-26 | SOT-26 | SOT-26 |
| Package / Case | SOT-23-6 | SOT-23-6 | SOT-23-6 |
