ZXMN6A08E6QTA
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Diodes Incorporated ZXMN6A08E6QTA

Manufacturer No:
ZXMN6A08E6QTA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXMN6A08E6QTA Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 2.8A SOT26
Delivery:
Payment:
iso14001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:80mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:459 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):1.1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-26
Package / Case:SOT-23-6
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Similar Products

Part Number ZXMN6A08E6QTA ZXMN6A08E6TA  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Ta) 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 4.8A, 10V 80mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.8 nC @ 10 V 5.8 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 459 pF @ 40 V 459 pF @ 40 V
FET Feature - -
Power Dissipation (Max) 1.1W (Ta) 1.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-26 SOT-26
Package / Case SOT-23-6 SOT-23-6

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