ZXMN3F31DN8TA
  • Share:

Diodes Incorporated ZXMN3F31DN8TA

Manufacturer No:
ZXMN3F31DN8TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXMN3F31DN8TA Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 30V 5.7A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:5.7A
Rds On (Max) @ Id, Vgs:24mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:608pF @ 15V
Power - Max:1.8W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
0 Remaining View Similar

In Stock

$0.91
786

Please send RFQ , we will respond immediately.

Similar Products

Part Number ZXMN3F31DN8TA ZXMC3F31DN8TA  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type 2 N-Channel (Dual) N and P-Channel
FET Feature Logic Level Gate Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) @ 25°C 5.7A 6.8A, 4.9A
Rds On (Max) @ Id, Vgs 24mOhm @ 7A, 10V 24mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.9nC @ 10V 12.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 608pF @ 15V 608pF @ 15V
Power - Max 1.8W 1.8W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO 8-SO

Related Product By Categories

AO4629
AO4629
Alpha & Omega Semiconductor Inc.
MOSFET N/P-CH 30V 6A/5.5A 8SOIC
MAX5054BATA+
MAX5054BATA+
Analog Devices Inc./Maxim Integrated
BUFFER/INVERTER BASED MOSFET DRI
SI1016X-T1-GE3
SI1016X-T1-GE3
Vishay Siliconix
MOSFET N/P-CH 20V SC89-6
USB10H
USB10H
Fairchild Semiconductor
SMALL SIGNAL P-CHANNEL MOSFET
PSMN013-40VLDX
PSMN013-40VLDX
Nexperia USA Inc.
PSMN013-40VLD - DUAL N-CHANNEL 4
TQM250NB06DCR RLG
TQM250NB06DCR RLG
Taiwan Semiconductor Corporation
60V, 30A, DUAL N-CHANNEL POWER M
DMN2024UVTQ-13
DMN2024UVTQ-13
Diodes Incorporated
MOSFET BVDSS: 8V~24V TSOT26 T&R
SI9934BDY-T1-GE3
SI9934BDY-T1-GE3
Vishay Siliconix
MOSFET 2P-CH 12V 4.8A 8SOIC
AUIRF7103Q
AUIRF7103Q
Infineon Technologies
MOSFET 2N-CH 50V 3A 8SOIC
CAS100H12AM1
CAS100H12AM1
Wolfspeed, Inc.
MOSFET 2N-CH 1200V 168A MODULE
TT8M1TR
TT8M1TR
Rohm Semiconductor
MOSFET N/P-CH 20V 2.5A TSST8
SP8M5FRATB
SP8M5FRATB
Rohm Semiconductor
4V DRIVE NCH+PCH MOSFET

Related Product By Brand

P6SMAJ26ADF
P6SMAJ26ADF
Diodes Incorporated
TVS DIODE 26VWM 42.1VC D-FLAT
UX31C50001
UX31C50001
Diodes Incorporated
XTAL OSC XO 125.0000MHZ CMOS
DL4001-13
DL4001-13
Diodes Incorporated
DIODE GEN PURP 50V 1A MELF
MMSZ5226B-7
MMSZ5226B-7
Diodes Incorporated
DIODE ZENER 3.3V 500MW SOD123
MMSZ5234BS-7-G
MMSZ5234BS-7-G
Diodes Incorporated
DIODE ZENER 6.2V 200MW SOD123
DDTC143FKA-7-F
DDTC143FKA-7-F
Diodes Incorporated
TRANS PREBIAS NPN 200MW SC59-3
DMTH6016LFDFW-7
DMTH6016LFDFW-7
Diodes Incorporated
MOSFET N-CH 60V 9.4A 6UDFN
BS170FTC
BS170FTC
Diodes Incorporated
MOSFET N-CH 60V 150UA SOT23-3
PAM8001NHR
PAM8001NHR
Diodes Incorporated
IC AMP CLASS D STER 2.8W 24SSOP
AP3983BMTR-G1
AP3983BMTR-G1
Diodes Incorporated
IC OFFLINE SWITCH FLYBACK 7SO
AP22816AKBWT-7
AP22816AKBWT-7
Diodes Incorporated
USB POWER SWITCH TSOT25 T&R 3K
PAM3101BAB330
PAM3101BAB330
Diodes Incorporated
IC REG LINEAR 3.3V 300MA SOT23-5