ZXMN3F31DN8TA
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Diodes Incorporated ZXMN3F31DN8TA

Manufacturer No:
ZXMN3F31DN8TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXMN3F31DN8TA Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 30V 5.7A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:5.7A
Rds On (Max) @ Id, Vgs:24mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:608pF @ 15V
Power - Max:1.8W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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Similar Products

Part Number ZXMN3F31DN8TA ZXMC3F31DN8TA  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type 2 N-Channel (Dual) N and P-Channel
FET Feature Logic Level Gate Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) @ 25°C 5.7A 6.8A, 4.9A
Rds On (Max) @ Id, Vgs 24mOhm @ 7A, 10V 24mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.9nC @ 10V 12.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 608pF @ 15V 608pF @ 15V
Power - Max 1.8W 1.8W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO 8-SO

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