ZXMN3B14FTA
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Diodes Incorporated ZXMN3B14FTA

Manufacturer No:
ZXMN3B14FTA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXMN3B14FTA Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 2.9A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:80mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id:700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:6.7 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:568 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number ZXMN3B14FTA ZXMN3A14FTA  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 2.9A (Ta) 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 4.5V, 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 3.1A, 4.5V 65mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 700mV @ 250µA (Min) 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.7 nC @ 4.5 V 8.6 nC @ 10 V
Vgs (Max) ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 568 pF @ 15 V 448 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 1W (Ta) 1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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