ZXMN3B04N8TA
  • Share:

Diodes Incorporated ZXMN3B04N8TA

Manufacturer No:
ZXMN3B04N8TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXMN3B04N8TA Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 7.2A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:25mOhm @ 7.2A, 4.5V
Vgs(th) (Max) @ Id:700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:23.1 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:2480 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

$1.25
78

Please send RFQ , we will respond immediately.

Similar Products

Part Number ZXMN3B04N8TA ZXMN3B04N8TC  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 7.2A (Ta) 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 25mOhm @ 7.2A, 4.5V 25mOhm @ 7.2A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA (Min) 700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 23.1 nC @ 4.5 V 23.1 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 2480 pF @ 15 V 2480 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2W (Ta) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

IRF9Z34PBF-BE3
IRF9Z34PBF-BE3
Vishay Siliconix
MOSFET P-CH 60V 18A TO220AB
MMIX1T132N50P3
MMIX1T132N50P3
IXYS
MOSFET N-CH 500V 63A POLAR3
IRF1010EZSTRLP
IRF1010EZSTRLP
Infineon Technologies
MOSFET N-CH 60V 75A D2PAK
PJF60R290E_T0_00001
PJF60R290E_T0_00001
Panjit International Inc.
600V N-CHANNEL SUPER JUNCTION MO
DMP6110SVTQ-7
DMP6110SVTQ-7
Diodes Incorporated
MOSFET P-CH 60V 7.3A TSOT26
IXFN100N50Q3
IXFN100N50Q3
IXYS
MOSFET N-CH 500V 82A SOT227B
SPP15P10P
SPP15P10P
Infineon Technologies
MOSFET P-CH 100V 15A TO220-3
IXTP152N085T
IXTP152N085T
IXYS
MOSFET N-CH 85V 152A TO220AB
IXTH48N20T
IXTH48N20T
IXYS
MOSFET N-CH 200V 48A TO247
SSM3J321T(TE85L,F)
SSM3J321T(TE85L,F)
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 5.2A TSM
SIS478DN-T1-GE3
SIS478DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 12A PPAK1212-8
FQPF6N80CT
FQPF6N80CT
onsemi
MOSFET N-CH 800V 5.5A TO220F

Related Product By Brand

3.0SMCJ48A-13
3.0SMCJ48A-13
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR SMC
FK2450029Q
FK2450029Q
Diodes Incorporated
XTAL OSC XO 24.5760MHZ CMOS
NX31800001
NX31800001
Diodes Incorporated
XTAL OSC XO 80.0000MHZ CMOS
FKC500030
FKC500030
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM3225 T&
PBC500002
PBC500002
Diodes Incorporated
XTAL OSC XO 125.0000MHZ PECL
RS3BB-13-F
RS3BB-13-F
Diodes Incorporated
DIODE GEN PURP 100V 3A SMB
1N5822-B
1N5822-B
Diodes Incorporated
DIODE SCHOTTKY 40V 3A DO201AD
BCX19TA
BCX19TA
Diodes Incorporated
TRANS NPN 45V 0.5A SOT23-3
DMC4040SSDQ-13
DMC4040SSDQ-13
Diodes Incorporated
MOSFET N/P-CH 40V 7.5A 8SO
DMP2123LQ-13
DMP2123LQ-13
Diodes Incorporated
MOSFET P-CH 20V 3A SOT23
PI74FCT16244TAEX
PI74FCT16244TAEX
Diodes Incorporated
IC BUF NON-INVERT 5.5V 48TSSOP
AP7345D-3028RH4-7
AP7345D-3028RH4-7
Diodes Incorporated
IC REG LINEAR 3V/2.8V 8DFN