ZXMN3A01FQTA
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Diodes Incorporated ZXMN3A01FQTA

Manufacturer No:
ZXMN3A01FQTA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXMN3A01FQTA Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 25V~30V SOT23 T&R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:120mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:190 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):625mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number ZXMN3A01FQTA ZXMN3A01FTA  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta) 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 120mOhm @ 2.5A, 10V 120mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.9 nC @ 10 V 3.9 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 25 V 190 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 625mW (Ta) 625mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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