ZXMN2B03E6TA
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Diodes Incorporated ZXMN2B03E6TA

Manufacturer No:
ZXMN2B03E6TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXMN2B03E6TA Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 4.3A SOT23-6
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:40mOhm @ 4.3A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14.5 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1160 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-6
Package / Case:SOT-23-6
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Similar Products

Part Number ZXMN2B03E6TA ZXMN2A03E6TA  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 4.3A (Ta) 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 40mOhm @ 4.3A, 4.5V 55mOhm @ 7.2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 14.5 nC @ 4.5 V 8.2 nC @ 4.5 V
Vgs (Max) ±8V ±12V
Input Capacitance (Ciss) (Max) @ Vds 1160 pF @ 10 V 837 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 1.1W (Ta) 1.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-6 SOT-23-6
Package / Case SOT-23-6 SOT-23-6

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