ZXMN2A04DN8TC
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Diodes Incorporated ZXMN2A04DN8TC

Manufacturer No:
ZXMN2A04DN8TC
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXMN2A04DN8TC Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 20V 5.9A 8SOIC
Delivery:
Payment:
iso14001
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Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:5.9A
Rds On (Max) @ Id, Vgs:25mOhm @ 5.9A, 4.5V
Vgs(th) (Max) @ Id:700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:22.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:1880pF @ 10V
Power - Max:1.8W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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Similar Products

Part Number ZXMN2A04DN8TC ZXMN3A04DN8TC   ZXMN2A04DN8TA  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 30V 20V
Current - Continuous Drain (Id) @ 25°C 5.9A 6.5A 5.9A
Rds On (Max) @ Id, Vgs 25mOhm @ 5.9A, 4.5V 20mOhm @ 12.6A, 10V 25mOhm @ 5.9A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA (Min) 1V @ 250µA (Min) 700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 22.1nC @ 5V 36.8nC @ 10V 22.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 1880pF @ 10V 1890pF @ 15V 1880pF @ 10V
Power - Max 1.8W 1.81W 1.8W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO 8-SO 8-SO

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