ZXMN10B08E6TC
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Diodes Incorporated ZXMN10B08E6TC

Manufacturer No:
ZXMN10B08E6TC
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXMN10B08E6TC Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 1.6A SOT26
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.3V, 10V
Rds On (Max) @ Id, Vgs:230mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:497 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):1.1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-26
Package / Case:SOT-23-6
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Part Number ZXMN10B08E6TC ZXMN10A08E6TC   ZXMN10B08E6TA  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta) 1.5A (Ta) 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.3V, 10V 6V, 10V 4.3V, 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 1.6A, 10V 250mOhm @ 3.2A, 10V 230mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 4V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.2 nC @ 10 V 7.7 nC @ 10 V 9.2 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 497 pF @ 50 V 405 pF @ 50 V 497 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 1.1W (Ta) 1.1W (Ta) 1.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-26 SOT-26 SOT-26
Package / Case SOT-23-6 SOT-23-6 SOT-23-6

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