ZXMN10A11GTC
  • Share:

Diodes Incorporated ZXMN10A11GTC

Manufacturer No:
ZXMN10A11GTC
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXMN10A11GTC Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 1.7A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:350mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:274 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-3
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

-
394

Please send RFQ , we will respond immediately.

Similar Products

Part Number ZXMN10A11GTC ZXMN10A11KTC   ZXMN10A11GTA  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Ta) 2.4A (Ta) 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 2.6A, 10V 350mOhm @ 2.6A, 10V 350mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.4 nC @ 10 V 5.4 nC @ 10 V 5.4 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 274 pF @ 50 V 274 pF @ 50 V 274 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 2W (Ta) 2.11W (Ta) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223-3 TO-252-3 SOT-223-3
Package / Case TO-261-4, TO-261AA TO-252-3, DPak (2 Leads + Tab), SC-63 TO-261-4, TO-261AA

Related Product By Categories

IPD036N04LGATMA1
IPD036N04LGATMA1
Infineon Technologies
MOSFET N-CH 40V 90A TO252-31
MMBF1374T1
MMBF1374T1
onsemi
SMALL SIGNAL N-CHANNEL MOSFET
BSC059N04LS6ATMA1
BSC059N04LS6ATMA1
Infineon Technologies
MOSFET N-CH 40V 17A TDSON
FDP8N50NZ
FDP8N50NZ
onsemi
MOSFET N-CH 500V 8A TO220-3
SQD50P03-07_GE3
SQD50P03-07_GE3
Vishay Siliconix
MOSFET P-CH 30V 50A TO252AA
RM6N800IP
RM6N800IP
Rectron USA
MOSFET N-CHANNEL 800V 6A TO251
BUK762R7-30B,118
BUK762R7-30B,118
Nexperia USA Inc.
MOSFET N-CH 30V 75A D2PAK
2N7002PS115
2N7002PS115
Nexperia USA Inc.
NOW NEXPERIA 2N7002PS - SMALL SI
BUK9GTHP-55PJTR,51
BUK9GTHP-55PJTR,51
Nexperia USA Inc.
IPOC TRENCHFET
IRF9Z14STRL
IRF9Z14STRL
Vishay Siliconix
MOSFET P-CH 60V 6.7A D2PAK
VN2410LZL1G
VN2410LZL1G
onsemi
MOSFET N-CH 240V 200MA TO92-3
R6024ENJTL
R6024ENJTL
Rohm Semiconductor
MOSFET N-CH 600V 24A LPTS

Related Product By Brand

D1213A-04SO-7
D1213A-04SO-7
Diodes Incorporated
TVS DIODE 3.3VWM 10VC SOT26
D24V0L1B2LP-7B
D24V0L1B2LP-7B
Diodes Incorporated
TVS DIODE 24VWM 46VC DFN1006-2
GC1200068
GC1200068
Diodes Incorporated
CRYSTAL METAL CAN 49S/SMD T&R 1K
FH1920004
FH1920004
Diodes Incorporated
CRYSTAL 19.2000MHZ 12PF SMD
FL4000269Q
FL4000269Q
Diodes Incorporated
CRYSTAL 40.0000MHZ 10PF SMD
SDT10100CT
SDT10100CT
Diodes Incorporated
DIODE ARRAY SCHOT 100V TO220AB
SD107WS-7-F
SD107WS-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 100MA SOD323
BAV116HWF-7
BAV116HWF-7
Diodes Incorporated
DIODE SW 130V 215MA SOD123F
B190BE-13
B190BE-13
Diodes Incorporated
DIODE SCHOTTKY 90V 1A SMB
DMC2041UFDB-13
DMC2041UFDB-13
Diodes Incorporated
MOSFET N/P-CH 20V 6UDFN
AP9101CK6-BCTRG1
AP9101CK6-BCTRG1
Diodes Incorporated
IC BATT PROT LI-ION 1CELL SOT26
AP2125N-2.8TRE1
AP2125N-2.8TRE1
Diodes Incorporated
IC REG LINEAR 2.8V 300MA SOT23-3