ZXMN10A08E6TC
  • Share:

Diodes Incorporated ZXMN10A08E6TC

Manufacturer No:
ZXMN10A08E6TC
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXMN10A08E6TC Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 1.5A SOT26
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:250mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:405 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):1.1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-26
Package / Case:SOT-23-6
0 Remaining View Similar

In Stock

$0.26
470

Please send RFQ , we will respond immediately.

Similar Products

Part Number ZXMN10A08E6TC ZXMN10B08E6TC   ZXMN10A08E6TA  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 1.5A (Ta) 1.6A (Ta) 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 4.3V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 3.2A, 10V 230mOhm @ 1.6A, 10V 250mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 3V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.7 nC @ 10 V 9.2 nC @ 10 V 7.7 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 405 pF @ 50 V 497 pF @ 50 V 405 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 1.1W (Ta) 1.1W (Ta) 1.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-26 SOT-26 SOT-26
Package / Case SOT-23-6 SOT-23-6 SOT-23-6

Related Product By Categories

FDI9406-F085
FDI9406-F085
Fairchild Semiconductor
FDI9406 - N-CHANNEL POWERTRENCH
SI5448DU-T1-GE3
SI5448DU-T1-GE3
Vishay Siliconix
MOSFET N-CH 40V 25A PPAK
STD25NF10LA
STD25NF10LA
STMicroelectronics
MOSFET N-CH 100V 25A DPAK
IAUA180N04S5N012AUMA1
IAUA180N04S5N012AUMA1
Infineon Technologies
MOSFET N-CH 40V 180A HSOF-5-1
IPP100N06S3-03
IPP100N06S3-03
Infineon Technologies
MOSFET N-CH 55V 100A TO220-3
SI7107DN-T1-E3
SI7107DN-T1-E3
Vishay Siliconix
MOSFET P-CH 20V 9.8A PPAK1212-8
NTD4808NT4G
NTD4808NT4G
onsemi
MOSFET N-CH 30V 10A/63A DPAK
SSM3K315T(TE85L,F)
SSM3K315T(TE85L,F)
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 6A TSM
IRF6711STR1PBF
IRF6711STR1PBF
Infineon Technologies
MOSFET N-CH 25V 19A DIRECTFET
SUM110P08-11-E3
SUM110P08-11-E3
Vishay Siliconix
MOSFET P-CH 80V 110A TO263
AUIRLS3114Z
AUIRLS3114Z
Infineon Technologies
MOSFET N-CH 40V 56A DPAK
SIR330DP-T1-GE3
SIR330DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 35A PPAK SO-8

Related Product By Brand

SMF4L10AQ-7
SMF4L10AQ-7
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR PP
FL3840037
FL3840037
Diodes Incorporated
CRYSTAL 38.4000MHZ 10PF SMD
FH2600005
FH2600005
Diodes Incorporated
CRYSTAL 26.0000MHZ 9PF SMD
FKA000013
FKA000013
Diodes Incorporated
XTAL OSC XO 100.0000MHZ CMOS SMD
1N4448WSQ-7-F
1N4448WSQ-7-F
Diodes Incorporated
DIODE GEN PURP 75V 250MA SOD323
1N5246B-T
1N5246B-T
Diodes Incorporated
DIODE ZENER 16V 500MW DO35
BZT52C47-7
BZT52C47-7
Diodes Incorporated
DIODE ZENER 47V 410MW SOD123
DDTC144EUAQ-13-F
DDTC144EUAQ-13-F
Diodes Incorporated
PREBIAS TRANSISTOR SOT323 T&R 10
PI3HDMI221-AZFE
PI3HDMI221-AZFE
Diodes Incorporated
IC INTERFACE SPECIALIZED 56TQFN
PI74FCT162245ATV
PI74FCT162245ATV
Diodes Incorporated
IC TXRX NON-INVERT 5.5V 48SSOP
PT8A3294BPE
PT8A3294BPE
Diodes Incorporated
HEATER CONTROLLER DIP-8
AP7361-10FGE-7
AP7361-10FGE-7
Diodes Incorporated
IC REG LINEAR 1V 1A 8UDFN