ZXMN10A08DN8TC
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Diodes Incorporated ZXMN10A08DN8TC

Manufacturer No:
ZXMN10A08DN8TC
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXMN10A08DN8TC Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 100V 1.6A 8SOIC
Delivery:
Payment:
iso14001
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Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):100V
Current - Continuous Drain (Id) @ 25°C:1.6A
Rds On (Max) @ Id, Vgs:250mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:7.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:405pF @ 50V
Power - Max:1.25W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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Similar Products

Part Number ZXMN10A08DN8TC ZXMN10A08DN8TA  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 100V 100V
Current - Continuous Drain (Id) @ 25°C 1.6A 1.6A
Rds On (Max) @ Id, Vgs 250mOhm @ 3.2A, 10V 250mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA (Min) 2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 10V 7.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 405pF @ 50V 405pF @ 50V
Power - Max 1.25W 1.25W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO 8-SO

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