Diodes Incorporated-ZXMHC3A01N8TC - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N and 2 P-Channel (Half Bridge)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	2.17A, 1.64A
Rds On (Max) @ Id, Vgs:	125mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	3.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	190pF @ 25V
Power - Max:	870mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

Diodes Incorporated ZXMHC3A01N8TC