ZXMD65P02N8TA
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Diodes Incorporated ZXMD65P02N8TA

Manufacturer No:
ZXMD65P02N8TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXMD65P02N8TA Datasheet
ECAD Model:
-
Description:
MOSFET 2P-CH 20V 4A 8-SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:4A
Rds On (Max) @ Id, Vgs:50mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id:700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:960pF @ 15V
Power - Max:1.75W
Operating Temperature:- 
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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Similar Products

Part Number ZXMD65P02N8TA ZXMD65P03N8TA   ZXMD65P02N8TC   ZXMD65N02N8TA  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Standard Standard Standard
Drain to Source Voltage (Vdss) 20V 30V 20V 20V
Current - Continuous Drain (Id) @ 25°C 4A 3.8A 4A 6.6A
Rds On (Max) @ Id, Vgs 50mOhm @ 2.9A, 4.5V 55mOhm @ 4.9A, 10V 50mOhm @ 2.9A, 4.5V 25mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA (Min) 1V @ 250µA 700mV @ 250µA (Min) 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V 25.7nC @ 10V 20nC @ 4.5V -
Input Capacitance (Ciss) (Max) @ Vds 960pF @ 15V 930pF @ 25V 960pF @ 15V -
Power - Max 1.75W 1.25W 1.75W 2W
Operating Temperature - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO 8-SO 8-SO 8-SO

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