ZXMC4A16DN8TA
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Diodes Incorporated ZXMC4A16DN8TA

Manufacturer No:
ZXMC4A16DN8TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXMC4A16DN8TA Datasheet
ECAD Model:
-
Description:
MOSFET N/P-CH 40V 4A/3.6A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N and P-Channel Complementary
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:5.2A (Ta), 4.7A (Ta)
Rds On (Max) @ Id, Vgs:50mOhm @ 4.5A, 10V, 60mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id:1V @ 250mA (Min)
Gate Charge (Qg) (Max) @ Vgs:17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:770pF @ 40V, 1000pF @ 20V
Power - Max:2.1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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Similar Products

Part Number ZXMC4A16DN8TA ZXMC4A16DN8TC   ZXMC3A16DN8TA  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Active
FET Type N and P-Channel Complementary N and P-Channel Complementary N and P-Channel
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 40V 40V 30V
Current - Continuous Drain (Id) @ 25°C 5.2A (Ta), 4.7A (Ta) 5.2A (Ta), 4.7A (Ta) 4.9A, 4.1A
Rds On (Max) @ Id, Vgs 50mOhm @ 4.5A, 10V, 60mOhm @ 3.8A, 10V 50mOhm @ 4.5A, 10V, 60mOhm @ 3.8A, 10V 35mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 1V @ 250mA (Min) 1V @ 250mA (Min) 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V 17nC @ 10V 17.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 40V, 1000pF @ 20V 770pF @ 40V, 1000pF @ 20V 796pF @ 25V
Power - Max 2.1W 2.1W 1.25W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO 8-SO 8-SO

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