ZXMC3A18DN8TA
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Diodes Incorporated ZXMC3A18DN8TA

Manufacturer No:
ZXMC3A18DN8TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXMC3A18DN8TA Datasheet
ECAD Model:
-
Description:
MOSFET N/P-CH 30V 8-SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:5.8A, 4.8A
Rds On (Max) @ Id, Vgs:25mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1800pF @ 25V
Power - Max:1.8W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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Similar Products

Part Number ZXMC3A18DN8TA ZXMC3A16DN8TA   ZXMC3A17DN8TA  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Active Active
FET Type N and P-Channel N and P-Channel N and P-Channel
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V 30V
Current - Continuous Drain (Id) @ 25°C 5.8A, 4.8A 4.9A, 4.1A 4.1A, 3.4A
Rds On (Max) @ Id, Vgs 25mOhm @ 5.8A, 10V 35mOhm @ 9A, 10V 50mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA (Min) 1V @ 250µA (Min) 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V 17.5nC @ 10V 12.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V 796pF @ 25V 600pF @ 25V
Power - Max 1.8W 1.25W 1.25W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO 8-SO 8-SO

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