ZXM66P02N8TC
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Diodes Incorporated ZXM66P02N8TC

Manufacturer No:
ZXM66P02N8TC
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXM66P02N8TC Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 6.4A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:25mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id:700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:43.3 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:2068 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.56W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number ZXM66P02N8TC ZXM66P02N8TA  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 6.4A (Ta) 6.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 25mOhm @ 3.2A, 4.5V 25mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA (Min) 700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 43.3 nC @ 4.5 V 43.3 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 2068 pF @ 15 V 2068 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 1.56W (Ta) 1.56W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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