ZXM66N02N8TA
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Diodes Incorporated ZXM66N02N8TA

Manufacturer No:
ZXM66N02N8TA
Manufacturer:
Diodes Incorporated
Package:
Digi-Reel®
Datasheet:
ZXM66N02N8TA Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 9A 8-SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:15mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id:700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number ZXM66N02N8TA ZXM66N03N8TA   ZXM66P02N8TA  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta) 9A (Ta) 6.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - - 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 15mOhm @ 4.1A, 4.5V 15mOhm @ 7.3A, 10V 25mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA (Min) 1V @ 250µA 700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs - - 43.3 nC @ 4.5 V
Vgs (Max) - - ±12V
Input Capacitance (Ciss) (Max) @ Vds - - 2068 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) - - 1.56W (Ta)
Operating Temperature - - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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