ZXM62P02E6TA
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Diodes Incorporated ZXM62P02E6TA

Manufacturer No:
ZXM62P02E6TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXM62P02E6TA Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 2.3A SOT23-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.7V, 4.5V
Rds On (Max) @ Id, Vgs:200mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id:700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:5.8 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:320 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-6
Package / Case:SOT-23-6
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Similar Products

Part Number ZXM62P02E6TA ZXM62P03E6TA  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta) 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V 4.5V, 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 1.6A, 4.5V 150mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id 700mV @ 250µA (Min) 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.8 nC @ 4.5 V 10.2 nC @ 10 V
Vgs (Max) ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 320 pF @ 15 V 330 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.1W (Ta) 625mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-6 SOT-26
Package / Case SOT-23-6 SOT-23-6

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