ZXM62N03E6TA
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Diodes Incorporated ZXM62N03E6TA

Manufacturer No:
ZXM62N03E6TA
Manufacturer:
Diodes Incorporated
Package:
Digi-Reel®
Datasheet:
ZXM62N03E6TA Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 3.2A SOT-23-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:110mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.6 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-6
Package / Case:SOT-23-6
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Similar Products

Part Number ZXM62N03E6TA ZXM62P03E6TA  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Active
FET Type N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta) 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 2.2A, 10V 150mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.6 nC @ 10 V 10.2 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 25 V 330 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 625mW (Ta)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-6 SOT-26
Package / Case SOT-23-6 SOT-23-6

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