ZVP2110GTC
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Diodes Incorporated ZVP2110GTC

Manufacturer No:
ZVP2110GTC
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZVP2110GTC Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 100V 310MA SOT223
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8Ohm @ 375mA, 10V
Vgs(th) (Max) @ Id:3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:100 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-3
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number ZVP2110GTC ZVP2120GTC   ZVP2110GTA  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 200 V 100 V
Current - Continuous Drain (Id) @ 25°C 310mA (Ta) 200mA (Ta) 310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 8Ohm @ 375mA, 10V 25Ohm @ 150mA, 10V 8Ohm @ 375mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA 3.5V @ 1mA 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 100 pF @ 25 V 100 pF @ 25 V 100 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 2W (Ta) 2W (Ta) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223-3 SOT-223-3 SOT-223-3
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

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