ZVP2110ASTZ
  • Share:

Diodes Incorporated ZVP2110ASTZ

Manufacturer No:
ZVP2110ASTZ
Manufacturer:
Diodes Incorporated
Package:
Tape & Box (TB)
Datasheet:
ZVP2110ASTZ Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 100V 230MA E-LINE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8Ohm @ 375mA, 10V
Vgs(th) (Max) @ Id:3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:100 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):700mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:E-Line (TO-92 compatible)
Package / Case:E-Line-3
0 Remaining View Similar

In Stock

$0.40
1,753

Please send RFQ , we will respond immediately.

Similar Products

Part Number ZVP2110ASTZ ZVP2120ASTZ  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 200 V
Current - Continuous Drain (Id) @ 25°C 230mA (Ta) 120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 8Ohm @ 375mA, 10V 25Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 100 pF @ 25 V 100 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 700mW (Ta) 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package E-Line (TO-92 compatible) TO-92
Package / Case E-Line-3 TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Related Product By Categories

STF15N65M5
STF15N65M5
STMicroelectronics
MOSFET N-CH 650V 11A TO220FP
SI2316BDS-T1-BE3
SI2316BDS-T1-BE3
Vishay Siliconix
N-CHANNEL 30-V (D-S) MOSFET
DMN3150L-7
DMN3150L-7
Diodes Incorporated
MOSFET N-CH 28V 3.8A SOT23-3
IPB019N08N3GATMA1
IPB019N08N3GATMA1
Infineon Technologies
MOSFET N-CH 80V 180A TO263-7
BUK7M12-40EX
BUK7M12-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 48A LFPAK33
PJQ4463AP_R2_00001
PJQ4463AP_R2_00001
Panjit International Inc.
60V P-CHANNEL ENHANCEMENT MODE M
NVMFS6H836NLT1G
NVMFS6H836NLT1G
onsemi
MOSFET N-CH 80V 16A/77A 5DFN
NTDV20N06LT4G
NTDV20N06LT4G
onsemi
MOSFET N-CH 60V 20A DPAK
STL110NS3LLH7
STL110NS3LLH7
STMicroelectronics
MOSFET N-CH 30V 120A POWERFLAT
SIHP12N50C-E3
SIHP12N50C-E3
Vishay Siliconix
MOSFET N-CH 500V 12A TO220AB
SSM3K15FS,LF
SSM3K15FS,LF
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 100MA SSM
AOT298L
AOT298L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 100V 9A/58A TO220

Related Product By Brand

FH4800014
FH4800014
Diodes Incorporated
CRYSTAL 48.0000MHZ 10PF SMD
FN5200008
FN5200008
Diodes Incorporated
XTAL OSC XO 52.0000MHZ CMOS SMD
UX7031E0125.000000
UX7031E0125.000000
Diodes Incorporated
XTAL OSC XO 125.0000MHZ LVDS SMD
S3M-13
S3M-13
Diodes Incorporated
DIODE GEN PURP 1KV 3A SMC
DZ23C15-7
DZ23C15-7
Diodes Incorporated
DIODE ZENER ARRAY 15V SOT23-3
DDZ9713Q-7
DDZ9713Q-7
Diodes Incorporated
DIODE ZENER 30V 500MW SOD123
EMF21-7
EMF21-7
Diodes Incorporated
TRANS NPN PREBIAS/PNP SOT563
PI3B32X384BEX
PI3B32X384BEX
Diodes Incorporated
IC BUS SWITCH 5 X 1:1 48BQSOP
DGD21904MS14-13
DGD21904MS14-13
Diodes Incorporated
IC GATE DRV HALF-BRIDG 14SO 2.5K
APX803L05-40SA-7
APX803L05-40SA-7
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23
AH9251-W-7
AH9251-W-7
Diodes Incorporated
MAGNETIC SWITCH OMNIPOL SC59-3
AH3382-W-7
AH3382-W-7
Diodes Incorporated
MAGNETIC SWITCH UNIPOLAR SC59