ZVP2110A
  • Share:

Diodes Incorporated ZVP2110A

Manufacturer No:
ZVP2110A
Manufacturer:
Diodes Incorporated
Package:
Bulk
Datasheet:
ZVP2110A Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 100V 230MA TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8Ohm @ 375mA, 10V
Vgs(th) (Max) @ Id:3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:100 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):700mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92
Package / Case:TO-226-3, TO-92-3 (TO-226AA)
0 Remaining View Similar

In Stock

$0.93
544

Please send RFQ , we will respond immediately.

Similar Products

Part Number ZVP2110A ZVP2120A  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 200 V
Current - Continuous Drain (Id) @ 25°C 230mA (Ta) 120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 8Ohm @ 375mA, 10V 25Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 100 pF @ 25 V 100 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 700mW (Ta) 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-92 TO-92
Package / Case TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA)

Related Product By Categories

PSMN6R0-25YLD115
PSMN6R0-25YLD115
NXP USA Inc.
N-CHANNEL POWER MOSFET
NTLJS7D2P02P8ZTAG
NTLJS7D2P02P8ZTAG
onsemi
MOSFET P-CH 20V 7.9A 6PQFN
FDMS6673BZ
FDMS6673BZ
onsemi
MOSFET P-CH 30V 15.2A/28A 8PQFN
IXFH80N65X2
IXFH80N65X2
IXYS
MOSFET N-CH 650V 80A TO247
SSM3K357R,LF
SSM3K357R,LF
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 650MA SOT23F
FDB5800
FDB5800
onsemi
MOSFET N-CH 60V 14A/80A D2PAK
PSMN1R5-30BLE118
PSMN1R5-30BLE118
NXP USA Inc.
N-CHANNEL POWER MOSFET
XP161A1265PR
XP161A1265PR
Torex Semiconductor Ltd
MOSFET N-CH 20V 4A SOT89
IRF7478TRPBF
IRF7478TRPBF
Infineon Technologies
MOSFET N-CH 60V 7A 8SO
BSP129L6327HTSA1
BSP129L6327HTSA1
Infineon Technologies
MOSFET N-CH 240V 350MA SOT223-4
RUM002N05T2L
RUM002N05T2L
Rohm Semiconductor
MOSFET N-CH 50V 200MA VMT3
RDD050N20TL
RDD050N20TL
Rohm Semiconductor
MOSFET N-CH 200V 5A CPT3

Related Product By Brand

NX3241E0100.000000
NX3241E0100.000000
Diodes Incorporated
XTAL OSC XO 100.0000MHZ HCSL SMD
1SMB5928B-13
1SMB5928B-13
Diodes Incorporated
DIODE ZENER 13V 3W SMB
BC847BVNQ-7
BC847BVNQ-7
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT56
FMMT591ATC
FMMT591ATC
Diodes Incorporated
TRANS PNP 40V 1A SOT23-3
ZXMHN6A07T8TA
ZXMHN6A07T8TA
Diodes Incorporated
MOSFET 4N-CH 60V 1.4A SM8
PI6C2404A-1WE
PI6C2404A-1WE
Diodes Incorporated
IC ZERO DELAY CLOCK BUFF 8-SOIC
PI5L100Q
PI5L100Q
Diodes Incorporated
IC ETHERNET SWITCH QUAD 16QSOP
PS383EPE
PS383EPE
Diodes Incorporated
IC SWITCH DUAL SPDT 16DIP
PI5A127UEX
PI5A127UEX
Diodes Incorporated
IC ANALOG SWITCH SPST DUAL 8MSOP
PI74VCX16244AE
PI74VCX16244AE
Diodes Incorporated
IC BUF NON-INVERT 3.6V 48TSSOP
74LVC1G08FW5-7
74LVC1G08FW5-7
Diodes Incorporated
IC GATE AND 1CH 2-INP DFN1010-6
APX803L40-15SA-7
APX803L40-15SA-7
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23