ZVP2106GTC
  • Share:

Diodes Incorporated ZVP2106GTC

Manufacturer No:
ZVP2106GTC
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZVP2106GTC Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 60V 450MA SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:100 pF @ 18 V
FET Feature:- 
Power Dissipation (Max):2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-3
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

-
300

Please send RFQ , we will respond immediately.

Similar Products

Part Number ZVP2106GTC ZVP2106GTA  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 450mA (Ta) 450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 100 pF @ 18 V 100 pF @ 18 V
FET Feature - -
Power Dissipation (Max) 2W (Ta) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223-3 SOT-223-3
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

TPIC5302D
TPIC5302D
Texas Instruments
N-CHANNEL POWER MOSFET
PMPB33XN,115
PMPB33XN,115
NXP USA Inc.
MOSFET N-CH 30V 4.3A DFN2020MD-6
G26P04K
G26P04K
Goford Semiconductor
P-40V,RD(MAX)<18M@-10V,RD(MAX)<2
SQ2361AEES-T1_BE3
SQ2361AEES-T1_BE3
Vishay Siliconix
MOSFET P-CH 60V 2.8A SOT23-3
STP26N60DM6
STP26N60DM6
STMicroelectronics
MOSFET N-CH 600V 18A TO220
NTMFS6D1N08HT1G
NTMFS6D1N08HT1G
onsemi
MOSFET N-CH 80V 17A/89A 5DFN
AOD2610E
AOD2610E
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 60V 46A TO252
APT10035B2LLG
APT10035B2LLG
Microsemi Corporation
MOSFET N-CH 1000V 28A T-MAX
NTD4808N-1G
NTD4808N-1G
onsemi
MOSFET N-CH 30V 10A/63A IPAK
IPI50CN10NGHKSA1
IPI50CN10NGHKSA1
Infineon Technologies
MOSFET N-CH 100V 20A TO262-3
IRF9317PBF
IRF9317PBF
Infineon Technologies
MOSFET P-CH 30V 16A 8SO
NVMFS5C410NWFT1G
NVMFS5C410NWFT1G
onsemi
MOSFET N-CH 40V 5DFN

Related Product By Brand

HX2127010Q
HX2127010Q
Diodes Incorporated
XTAL OSC XO 27.0000MHZ CMOS SMD
FNC500144
FNC500144
Diodes Incorporated
XTAL OSC XO 125.003125MHZ CMOS
BAW101-7
BAW101-7
Diodes Incorporated
DIODE ARRAY GP 300V 250MA SOT143
SBR0330CW-7
SBR0330CW-7
Diodes Incorporated
DIODE ARRAY SBR 30V 150MA SOT323
1N5407G-T
1N5407G-T
Diodes Incorporated
DIODE GEN PURP 800V 3A DO201AD
DDZ9717S-7
DDZ9717S-7
Diodes Incorporated
DIODE ZENER 43V 200MW SOD323
BC817-16W-7
BC817-16W-7
Diodes Incorporated
TRANS NPN 45V 0.5A SOT323
DMN1002UCA6-7
DMN1002UCA6-7
Diodes Incorporated
MOSFETN-CHAN 12V X4-DSN3118-6
DMN55D0UT-7
DMN55D0UT-7
Diodes Incorporated
MOSFET N-CH 50V 160MA SOT-523
DMP2088LCP3-7
DMP2088LCP3-7
Diodes Incorporated
MOSFET P-CH 20V 2.9A X2DSN1006-3
AP7383-18W5-7
AP7383-18W5-7
Diodes Incorporated
IC REG LIN 1.8V SOT25 T&R 3K
AP2204K-1.5TRG1
AP2204K-1.5TRG1
Diodes Incorporated
IC REG LINEAR 1.5V 150MA SOT23-5