ZVP2106GTC
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Diodes Incorporated ZVP2106GTC

Manufacturer No:
ZVP2106GTC
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZVP2106GTC Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 60V 450MA SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:100 pF @ 18 V
FET Feature:- 
Power Dissipation (Max):2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-3
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number ZVP2106GTC ZVP2106GTA  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 450mA (Ta) 450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 100 pF @ 18 V 100 pF @ 18 V
FET Feature - -
Power Dissipation (Max) 2W (Ta) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223-3 SOT-223-3
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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