ZVP2106GTC
  • Share:

Diodes Incorporated ZVP2106GTC

Manufacturer No:
ZVP2106GTC
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZVP2106GTC Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 60V 450MA SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:100 pF @ 18 V
FET Feature:- 
Power Dissipation (Max):2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-3
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

-
300

Please send RFQ , we will respond immediately.

Similar Products

Part Number ZVP2106GTC ZVP2106GTA  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 450mA (Ta) 450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 100 pF @ 18 V 100 pF @ 18 V
FET Feature - -
Power Dissipation (Max) 2W (Ta) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223-3 SOT-223-3
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

CSD17571Q2
CSD17571Q2
Texas Instruments
MOSFET N-CH 30V 22A 6SON
SK830321KL
SK830321KL
Panasonic Electronic Components
MOSFET N-CH 30V 7A/18A 8HSSO
PSMN1R2-25YL,115
PSMN1R2-25YL,115
Nexperia USA Inc.
MOSFET N-CH 25V 100A LFPAK56
IPI040N06N3GXKSA1
IPI040N06N3GXKSA1
Infineon Technologies
MOSFET N-CH 60V 90A TO262-3
SIHP17N60D-GE3
SIHP17N60D-GE3
Vishay Siliconix
MOSFET N-CH 600V 17A TO220AB
AUIRFS8407-7TRL
AUIRFS8407-7TRL
Infineon Technologies
MOSFET N-CH 40V 240A D2PAK
IRF540NSPBF
IRF540NSPBF
Infineon Technologies
MOSFET N-CH 100V 33A D2PAK
IRLZ44ZSTRRPBF
IRLZ44ZSTRRPBF
Infineon Technologies
MOSFET N-CH 55V 51A D2PAK
SI4158DY-T1-GE3
SI4158DY-T1-GE3
Vishay Siliconix
MOSFET N-CH 20V 36.5A 8SO
BSP254A,126
BSP254A,126
NXP USA Inc.
MOSFET P-CH 250V 200MA TO92-3
BUK7213-40A,118
BUK7213-40A,118
NXP USA Inc.
MOSFET N-CH 40V 55A DPAK
R6015KNXC7G
R6015KNXC7G
Rohm Semiconductor
600V 15A TO-220FM, HIGH-SPEED SW

Related Product By Brand

FL4800021
FL4800021
Diodes Incorporated
CRYSTAL 48.0000MHZ 18PF SMD
FL2600057
FL2600057
Diodes Incorporated
CRYSTAL 26.0000MHZ 12PF SMD
MBRF2060CT-JT
MBRF2060CT-JT
Diodes Incorporated
DIODE ARRAY 60V 10A ITO220AB
6A05-T
6A05-T
Diodes Incorporated
DIODE GEN PURP 50V 6A R6
APD245VD-E1
APD245VD-E1
Diodes Incorporated
DIODE SCHOTTKY
BZX84C11Q-13-F
BZX84C11Q-13-F
Diodes Incorporated
DIODE ZENER 11V 300MW SOT23
FMMT459TC
FMMT459TC
Diodes Incorporated
TRANS NPN 450V 0.15A SOT23-3
DDTC124GE-7-F
DDTC124GE-7-F
Diodes Incorporated
TRANS PREBIAS NPN 150MW SOT523
DMP1009UFDF-13
DMP1009UFDF-13
Diodes Incorporated
MOSFET P-CH 12V 15A 6UDFN
PI3EQX12802ZHE
PI3EQX12802ZHE
Diodes Incorporated
12G SAS3 2 PORT 4 CHANNELREDRIVE
AP393SG-13
AP393SG-13
Diodes Incorporated
IC COMP DUAL LOW POWER 8-SOIC
AH5794-WU-7
AH5794-WU-7
Diodes Incorporated
IC MOTOR DRIVER ON/OFF TSOT26