ZVP1320FQTA
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Diodes Incorporated ZVP1320FQTA

Manufacturer No:
ZVP1320FQTA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZVP1320FQTA Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 101V~250V SOT23 T&
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:65mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:80Ohm @ 30mA, 10V
Vgs(th) (Max) @ Id:3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:1.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:25 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number ZVP1320FQTA ZVP1320FTA  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 65mA (Ta) 35mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 80Ohm @ 30mA, 10V 80Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 1.2 nC @ 10 V -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 25 pF @ 100 V 50 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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