ZVNL110ASTZ
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Diodes Incorporated ZVNL110ASTZ

Manufacturer No:
ZVNL110ASTZ
Manufacturer:
Diodes Incorporated
Package:
Cut Tape (CT)
Datasheet:
ZVNL110ASTZ Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 320MA E-LINE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:75 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):700mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:E-Line (TO-92 compatible)
Package / Case:E-Line-3
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Similar Products

Part Number ZVNL110ASTZ ZVN2110ASTZ  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 320mA (Ta) 320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 500mA, 10V 4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 1.5V @ 1mA 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 75 pF @ 25 V 75 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 700mW (Ta) 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package E-Line (TO-92 compatible) E-Line (TO-92 compatible)
Package / Case E-Line-3 E-Line-3

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