ZVN4525GTC
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Diodes Incorporated ZVN4525GTC

Manufacturer No:
ZVN4525GTC
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZVN4525GTC Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 250V 310MA SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:8.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:1.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:3.65 nC @ 10 V
Vgs (Max):±40V
Input Capacitance (Ciss) (Max) @ Vds:72 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-3
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number ZVN4525GTC ZVP4525GTC   ZVN4525GTA  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Active
FET Type N-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 250 V 250 V
Current - Continuous Drain (Id) @ 25°C 310mA (Ta) 265mA (Ta) 310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V 3.5V, 10V 2.5V, 10V
Rds On (Max) @ Id, Vgs 8.5Ohm @ 500mA, 10V 14Ohm @ 200mA, 10V 8.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 1mA 2V @ 1mA 1.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 3.65 nC @ 10 V 3.45 nC @ 10 V 3.65 nC @ 10 V
Vgs (Max) ±40V ±40V ±40V
Input Capacitance (Ciss) (Max) @ Vds 72 pF @ 25 V 73 pF @ 25 V 72 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 2W (Ta) 2W (Ta) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223-3 SOT-223-3 SOT-223-3
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

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