ZVN4424GQTA
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Diodes Incorporated ZVN4424GQTA

Manufacturer No:
ZVN4424GQTA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZVN4424GQTA Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 240V SOT223 T&R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):240 V
Current - Continuous Drain (Id) @ 25°C:500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:5.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:1.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±40V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
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$0.41
1,499

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Similar Products

Part Number ZVN4424GQTA ZVN4424GTA  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 240 V 240 V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta) 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V 2.5V, 10V
Rds On (Max) @ Id, Vgs 5.5Ohm @ 500mA, 10V 5.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 1mA 1.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±40V ±40V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V 200 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223 SOT-223-3
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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