ZVN4306GTC
  • Share:

Diodes Incorporated ZVN4306GTC

Manufacturer No:
ZVN4306GTC
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZVN4306GTC Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 2.1A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:330mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-3
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

-
322

Please send RFQ , we will respond immediately.

Similar Products

Part Number ZVN4306GTC ZVN4306GVTC   ZVN4206GTC   ZVN4306GTA  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 2.1A (Ta) 2.1A (Ta) 1A (Ta) 2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 330mOhm @ 3A, 10V 330mOhm @ 3A, 10V 1Ohm @ 1.5A, 10V 330mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA 3V @ 1mA 3V @ 1mA 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - - -
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V 350 pF @ 25 V 100 pF @ 25 V 350 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 3W (Ta) 3W (Ta) 2W (Ta) 3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

SSM3K131TU,LF
SSM3K131TU,LF
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 6A UFM
DMG4812SSS-13
DMG4812SSS-13
Diodes Incorporated
MOSFET N-CH 30V 8A 8SO
IRF9Z24NSTRLPBF
IRF9Z24NSTRLPBF
Infineon Technologies
MOSFET P-CH 55V 12A D2PAK
SIR474DP-T1-GE3
SIR474DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 20A PPAK SO-8
PJC7401_R1_00001
PJC7401_R1_00001
Panjit International Inc.
SOT-323, MOSFET
SQD45P03-12_GE3
SQD45P03-12_GE3
Vishay Siliconix
MOSFET P-CH 30V 50A TO252
VN2460N3-G
VN2460N3-G
Microchip Technology
MOSFET N-CH 600V 160MA TO92-3
IAUC120N04S6N009ATMA1
IAUC120N04S6N009ATMA1
Infineon Technologies
MOSFET N-CH 40V 120A 8TDSON-33
SFR9210TM
SFR9210TM
Fairchild Semiconductor
P-CHANNEL POWER MOSFET
IRLZ24SPBF
IRLZ24SPBF
Vishay Siliconix
MOSFET N-CH 60V 17A D2PAK
NTD25P03LG
NTD25P03LG
onsemi
MOSFET P-CH 30V 25A DPAK
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH

Related Product By Brand

PR1006G-T
PR1006G-T
Diodes Incorporated
DIODE FAST REC 800V 1A DO41
B360AQ-13-F
B360AQ-13-F
Diodes Incorporated
SCHOTTKY DIODE SMA T&R 5K
ZC934ATC
ZC934ATC
Diodes Incorporated
DIODE VAR CAPACITANCE SOT23-3
BZX84C4V7Q-13-F
BZX84C4V7Q-13-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 10K
BZT52C16-7
BZT52C16-7
Diodes Incorporated
DIODE ZENER 16V 500MW SOD123
ZDT6753TA
ZDT6753TA
Diodes Incorporated
TRANS NPN/PNP 100V 2A SM8
MMDT4413-7
MMDT4413-7
Diodes Incorporated
TRANS NPN/PNP 40V 0.6A SOT363
ZXTN649FTA
ZXTN649FTA
Diodes Incorporated
TRANS NPN 25V 3A SOT23-3
DMT4011LSS-13
DMT4011LSS-13
Diodes Incorporated
MOSFET N-CH 40V 10.8A 8SO
DMP3004SSS-13
DMP3004SSS-13
Diodes Incorporated
MOSFET P-CH 30V 16.2A 8SO T&R 2
74AUP1G34SE-7
74AUP1G34SE-7
Diodes Incorporated
IC BUF NON-INVERT 3.6V SOT353
AP1184K5-25L-13
AP1184K5-25L-13
Diodes Incorporated
IC REG LINEAR 2.5V 4A TO263-5