ZVN4306AV
  • Share:

Diodes Incorporated ZVN4306AV

Manufacturer No:
ZVN4306AV
Manufacturer:
Diodes Incorporated
Package:
Bulk
Datasheet:
ZVN4306AV Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 1.1A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:330mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):850mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92
Package / Case:TO-226-3, TO-92-3 (TO-226AA)
0 Remaining View Similar

In Stock

$1.73
68

Please send RFQ , we will respond immediately.

Similar Products

Part Number ZVN4306AV ZVN4206AV   ZVN4306A  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 1.1A (Ta) 600mA (Ta) 1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 330mOhm @ 3A, 10V 1Ohm @ 1.5A, 10V 330mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA 3V @ 1mA 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V 100 pF @ 25 V 350 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 850mW (Ta) 700mW (Ta) 850mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-92 TO-92 TO-92
Package / Case TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA)

Related Product By Categories

G2R1000MT17D
G2R1000MT17D
GeneSiC Semiconductor
SIC MOSFET N-CH 4A TO247-3
UPA2803T1L-E2-AY
UPA2803T1L-E2-AY
Renesas Electronics America Inc
MOSFET N-CH 20V 20A 8DFN
STW32N65M5
STW32N65M5
STMicroelectronics
MOSFET N-CH 650V 24A TO247-3
STFH13N60M2
STFH13N60M2
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
IXFA72N30X3
IXFA72N30X3
IXYS
MOSFET N-CH 300V 72A TO263AA
NVMFS5C420NWFT1G
NVMFS5C420NWFT1G
onsemi
POWER MOSFET, N-CHANNEL, SO8FL,
IRF620STRRPBF
IRF620STRRPBF
Vishay Siliconix
MOSFET N-CH 200V 5.2A D2PAK
TPCA8008-H(TE12L,Q
TPCA8008-H(TE12L,Q
Toshiba Semiconductor and Storage
MOSFET N-CH 250V 4A 8SOP
SI3459DV-T1-E3
SI3459DV-T1-E3
Vishay Siliconix
MOSFET P-CH 60V 2.2A 6TSOP
IRL3302STRLPBF
IRL3302STRLPBF
Infineon Technologies
MOSFET N-CH 20V 39A D2PAK
VMO1600-02P
VMO1600-02P
IXYS
MOSFET N-CH 200V 1900A Y3-LI
RSD140P06TL
RSD140P06TL
Rohm Semiconductor
MOSFET P-CH 60V 14A CPT3

Related Product By Brand

3.0SMCJ9.0AQ-13
3.0SMCJ9.0AQ-13
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR SMC
FL4000158
FL4000158
Diodes Incorporated
CRYSTAL 40.0000MHZ 15PF SMD
FN3000041
FN3000041
Diodes Incorporated
XTAL OSC XO 30.0000MHZ CMOS SMD
SBRT2U45LP-7
SBRT2U45LP-7
Diodes Incorporated
DIODE SBR 45V 2A 3DFN
MBR3100VRTR-E1
MBR3100VRTR-E1
Diodes Incorporated
DIODE SCHOTTKY 100V 3A DO214AC
DDZ9678Q-13
DDZ9678Q-13
Diodes Incorporated
DIODE ZENER 1.8V 500MW SOD123
DMT67M8LK3-13
DMT67M8LK3-13
Diodes Incorporated
MOSFET BVDSS: 41V~60V TO252 T&R
PI90LV028AWE
PI90LV028AWE
Diodes Incorporated
IC RECEIVER 0/2 8SOIC
PI3B34X245BEX
PI3B34X245BEX
Diodes Incorporated
IC BUS SWITCH 8 X 1:1 80BQSOP
AP9214L-AA-HSB-7
AP9214L-AA-HSB-7
Diodes Incorporated
IC BATT PROT LI-ION 1CELL 6UDFN
PT7M7809STEX
PT7M7809STEX
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23-3
AS431ANTR-E1
AS431ANTR-E1
Diodes Incorporated
IC VREF SHUNT ADJ 0.5% SOT23-3