ZVN4106FTA
  • Share:

Diodes Incorporated ZVN4106FTA

Manufacturer No:
ZVN4106FTA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZVN4106FTA Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 200MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:35 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.64
954

Please send RFQ , we will respond immediately.

Similar Products

Part Number ZVN4106FTA ZVN4106FTC  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta) 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 500mA, 10V 2.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 35 pF @ 25 V 35 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 350mW (Ta) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

BB505CES-TL-E
BB505CES-TL-E
Renesas Electronics America Inc
RF N-CHANNEL MOSFET
SIHG22N60EF-GE3
SIHG22N60EF-GE3
Vishay Siliconix
MOSFET N-CH 600V 19A TO247AC
IRF9Z30PBF
IRF9Z30PBF
Vishay Siliconix
MOSFET P-CH 50V 18A TO220AB
BSC016N03LSGATMA1
BSC016N03LSGATMA1
Infineon Technologies
MOSFET N-CH 30V 32A/100A TDSON
DMN2029UVT-7
DMN2029UVT-7
Diodes Incorporated
MOSFET N-CH 6.8A TSOT26
IPB60R210CFD7ATMA1
IPB60R210CFD7ATMA1
Infineon Technologies
MOSFET N-CH 650V 12A TO263-3-2
AOB42S60L
AOB42S60L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 37A TO263
IXFH18N60X
IXFH18N60X
IXYS
MOSFET N-CH 600V 18A TO247
IRF7452TR
IRF7452TR
Infineon Technologies
MOSFET N-CH 100V 4.5A 8SO
IXTV36N50P
IXTV36N50P
IXYS
MOSFET N-CH 500V 36A PLUS220
SFT1423-E
SFT1423-E
onsemi
MOSFET N-CH 500V 2A TP
RCD041N25TL
RCD041N25TL
Rohm Semiconductor
MOSFET N-CH 250V 4A CPT3

Related Product By Brand

FD6000013
FD6000013
Diodes Incorporated
XTAL OSC XO SMD
FN2000091
FN2000091
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM7050 T&
BAS70W-04-7-F
BAS70W-04-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 70V SOT323
MBRM560-13-F
MBRM560-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 5A POWERMITE3
ZM4730A-13
ZM4730A-13
Diodes Incorporated
DIODE ZENER 3.9V 1W MELF
DDTD133HC-7-F
DDTD133HC-7-F
Diodes Incorporated
TRANS PREBIAS NPN 200MW SOT23-3
DDTC122LE-7-F
DDTC122LE-7-F
Diodes Incorporated
TRANS PREBIAS NPN 150MW SOT523
74LVC374AQ20-13
74LVC374AQ20-13
Diodes Incorporated
IC FF D-TYPE SNGL 8BIT 20QFN
AP2822GKETR-G1
AP2822GKETR-G1
Diodes Incorporated
IC PWR SWITCH N-CHAN 1:1 SOT23-5
AP2114H-3.3TRG1
AP2114H-3.3TRG1
Diodes Incorporated
IC REG LINEAR 3.3V 1A SOT223
AP130-28YRG-13
AP130-28YRG-13
Diodes Incorporated
IC REG LIN 2.8V 300MA SOT89R-3
PAM3115ABA330
PAM3115ABA330
Diodes Incorporated
IC REG LINEAR 3.3V 1.5A SOT223