ZVN3310ASTOA
  • Share:

Diodes Incorporated ZVN3310ASTOA

Manufacturer No:
ZVN3310ASTOA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZVN3310ASTOA Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 200MA E-LINE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):625mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:E-Line (TO-92 compatible)
Package / Case:E-Line-3
0 Remaining View Similar

In Stock

-
270

Please send RFQ , we will respond immediately.

Similar Products

Part Number ZVN3310ASTOA ZVN3310ASTOB   ZVN3320ASTOA  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 100 V 100 V -
Current - Continuous Drain (Id) @ 25°C 200mA (Ta) 200mA (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 10V 10V -
Rds On (Max) @ Id, Vgs 10Ohm @ 500mA, 10V 10Ohm @ 500mA, 10V -
Vgs(th) (Max) @ Id 2.4V @ 1mA 2.4V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 25 V 40 pF @ 25 V -
FET Feature - - -
Power Dissipation (Max) 625mW (Ta) 625mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole -
Supplier Device Package E-Line (TO-92 compatible) E-Line (TO-92 compatible) -
Package / Case E-Line-3 E-Line-3 -

Related Product By Categories

FDD044AN03L
FDD044AN03L
Fairchild Semiconductor
MOSFET N-CH 30V 21A/35A TO252AA
FDP7N60NZ
FDP7N60NZ
onsemi
MOSFET N-CH 600V 6.5A TO220-3
IPB108N15N3GATMA1
IPB108N15N3GATMA1
Infineon Technologies
MOSFET N-CH 150V 83A D2PAK
NVR1P02T1G
NVR1P02T1G
onsemi
MOSFET P-CH 20V 1A SOT-23-3
FDD13AN06A0-F085
FDD13AN06A0-F085
onsemi
MOSFET N-CH 60V 9.9A/50A TO252AA
AON6156
AON6156
Alpha & Omega Semiconductor Inc.
MOSFET N-CHANNEL 45V 100A 8DFN
IRF6621TR1
IRF6621TR1
Infineon Technologies
MOSFET N-CH 30V 12A DIRECTFET
FQH44N10
FQH44N10
onsemi
MOSFET N-CH 100V 48A TO247-3
IRFR1010ZTRRPBF
IRFR1010ZTRRPBF
Infineon Technologies
MOSFET N-CH 55V 42A DPAK
AUIRFP2602
AUIRFP2602
Infineon Technologies
MOSFET N-CH 24V 180A TO247AD
FDN338P_G
FDN338P_G
onsemi
MOSFET P-CH 20V 1.6A SUPERSOT3
HAT2160H-EL-E
HAT2160H-EL-E
Renesas Electronics America Inc
MOSFET N-CH 20V 60A LFPAK

Related Product By Brand

SMF4L26CA-7
SMF4L26CA-7
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR PP
FH1600096Q
FH1600096Q
Diodes Incorporated
CRYSTAL 16.0000MHZ 18PF SMD
FY2500052
FY2500052
Diodes Incorporated
CRYSTAL 25.0000MHZ 20PF SMD
BZT52C16-7
BZT52C16-7
Diodes Incorporated
DIODE ZENER 16V 500MW SOD123
DDTC114WE-7-F
DDTC114WE-7-F
Diodes Incorporated
TRANS PREBIAS NPN 150MW SOT523
DMN2046U-13
DMN2046U-13
Diodes Incorporated
MOSFET N-CH 20V 3.4A SOT23
PI6CV857BAE
PI6CV857BAE
Diodes Incorporated
IC CLK BUF DDR 200MHZ 1CIRC
PI3A125BCEX
PI3A125BCEX
Diodes Incorporated
IC SWITCH CMOS SPST SC70-5
PT8A3280WEX
PT8A3280WEX
Diodes Incorporated
HEATER CONTROLLER SO-8
ZM331643C
ZM331643C
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL TO92-3
PT7A7615S-13
PT7A7615S-13
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL 8SO
AH375-WG-7
AH375-WG-7
Diodes Incorporated
MAGNETIC SWITCH LATCH SC59-3