ZVN3310ASTOA
  • Share:

Diodes Incorporated ZVN3310ASTOA

Manufacturer No:
ZVN3310ASTOA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZVN3310ASTOA Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 200MA E-LINE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):625mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:E-Line (TO-92 compatible)
Package / Case:E-Line-3
0 Remaining View Similar

In Stock

-
270

Please send RFQ , we will respond immediately.

Similar Products

Part Number ZVN3310ASTOA ZVN3310ASTOB   ZVN3320ASTOA  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 100 V 100 V -
Current - Continuous Drain (Id) @ 25°C 200mA (Ta) 200mA (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 10V 10V -
Rds On (Max) @ Id, Vgs 10Ohm @ 500mA, 10V 10Ohm @ 500mA, 10V -
Vgs(th) (Max) @ Id 2.4V @ 1mA 2.4V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 25 V 40 pF @ 25 V -
FET Feature - - -
Power Dissipation (Max) 625mW (Ta) 625mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole -
Supplier Device Package E-Line (TO-92 compatible) E-Line (TO-92 compatible) -
Package / Case E-Line-3 E-Line-3 -

Related Product By Categories

SPA11N80C3XKSA1
SPA11N80C3XKSA1
Infineon Technologies
MOSFET N-CH 800V 11A TO220-FP
IRFS4610TRLPBF
IRFS4610TRLPBF
Infineon Technologies
MOSFET N-CH 100V 73A D2PAK
STB40N60M2
STB40N60M2
STMicroelectronics
MOSFET N-CH 600V 34A D2PAK
BUK6D43-40PX
BUK6D43-40PX
Nexperia USA Inc.
MOSFET P-CH 40V 6A DFN2020MD-6
AOTF22N50
AOTF22N50
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 500V 22A TO220-3F
PMV40UN,215
PMV40UN,215
NXP USA Inc.
MOSFET N-CH 30V 4.9A TO236AB
STS17NF3LL
STS17NF3LL
STMicroelectronics
MOSFET N-CH 30V 17A 8SO
IRLU3715ZPBF
IRLU3715ZPBF
Infineon Technologies
MOSFET N-CH 20V 49A I-PAK
IXFT9N80Q
IXFT9N80Q
IXYS
MOSFET N-CH 800V 9A TO268
IXTH152N085T
IXTH152N085T
IXYS
MOSFET N-CH 85V 152A TO247
SI4825DY-T1-GE3
SI4825DY-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 8.1A 8SO
BUK965R4-40E,118
BUK965R4-40E,118
Nexperia USA Inc.
MOSFET N-CH 40V 75A D2PAK

Related Product By Brand

SMBJ10A-13
SMBJ10A-13
Diodes Incorporated
TVS DIODE 10VWM 17VC SMB
SMBJ9.0A-13
SMBJ9.0A-13
Diodes Incorporated
TVS DIODE 9VWM 15.4VC SMB
UX22F62002
UX22F62002
Diodes Incorporated
XTAL OSC XO LVPECL SMD
FD3530005
FD3530005
Diodes Incorporated
XTAL OSC XO 35.3280MHZ CMOS SMD
BAS16HTWQ-13R
BAS16HTWQ-13R
Diodes Incorporated
DIODE FS 100V 200MA SOT363
ZTX712STOB
ZTX712STOB
Diodes Incorporated
TRANS PNP DARL 60V 0.8A E-LINE
DMP2039UFDE-7
DMP2039UFDE-7
Diodes Incorporated
MOSFET P-CH 25V 6.7A 6UDFN
PI74FCT162245CTVE
PI74FCT162245CTVE
Diodes Incorporated
IC TXRX NON-INVERT 5.5V 48SSOP
AP9214LA-AL-HSB-7
AP9214LA-AL-HSB-7
Diodes Incorporated
IC BATT PROT LI-ION 1CELL 6UDFN
PT8A3283WEX
PT8A3283WEX
Diodes Incorporated
HEATER CONTROLLER SO-8
AP2213D-3.0TRE1
AP2213D-3.0TRE1
Diodes Incorporated
IC REG LINEAR 3V 500MA TO252-2
AH266K-PG-B-A
AH266K-PG-B-A
Diodes Incorporated
MAGNETIC SWITCH LATCH 4SIP