ZVN3310ASTOA
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Diodes Incorporated ZVN3310ASTOA

Manufacturer No:
ZVN3310ASTOA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZVN3310ASTOA Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 200MA E-LINE
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):625mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:E-Line (TO-92 compatible)
Package / Case:E-Line-3
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Similar Products

Part Number ZVN3310ASTOA ZVN3310ASTOB   ZVN3320ASTOA  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 100 V 100 V -
Current - Continuous Drain (Id) @ 25°C 200mA (Ta) 200mA (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 10V 10V -
Rds On (Max) @ Id, Vgs 10Ohm @ 500mA, 10V 10Ohm @ 500mA, 10V -
Vgs(th) (Max) @ Id 2.4V @ 1mA 2.4V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 25 V 40 pF @ 25 V -
FET Feature - - -
Power Dissipation (Max) 625mW (Ta) 625mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole -
Supplier Device Package E-Line (TO-92 compatible) E-Line (TO-92 compatible) -
Package / Case E-Line-3 E-Line-3 -

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