ZVN3310A
  • Share:

Diodes Incorporated ZVN3310A

Manufacturer No:
ZVN3310A
Manufacturer:
Diodes Incorporated
Package:
Bulk
Datasheet:
ZVN3310A Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 200MA TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):625mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92
Package / Case:TO-226-3, TO-92-3 (TO-226AA)
0 Remaining View Similar

In Stock

$0.92
284

Please send RFQ , we will respond immediately.

Similar Products

Part Number ZVN3310A ZVN4310A   ZVN3320A  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Obsolete
FET Type N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 100 V 100 V -
Current - Continuous Drain (Id) @ 25°C 200mA (Ta) 900mA (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 10V 5V, 10V -
Rds On (Max) @ Id, Vgs 10Ohm @ 500mA, 10V 500mOhm @ 3A, 10V -
Vgs(th) (Max) @ Id 2.4V @ 1mA 3V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 25 V 350 pF @ 25 V -
FET Feature - - -
Power Dissipation (Max) 625mW (Ta) 850mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole -
Supplier Device Package TO-92 TO-92 -
Package / Case TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA) -

Related Product By Categories

TK20V60W5,LVQ
TK20V60W5,LVQ
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 20A 4DFN
FQI15P12TU
FQI15P12TU
Fairchild Semiconductor
MOSFET P-CH 120V 15A I2PAK
SQ2337ES-T1_BE3
SQ2337ES-T1_BE3
Vishay Siliconix
MOSFET P-CH 80V 2.2A SOT23-3
IRF840ALPBF
IRF840ALPBF
Vishay Siliconix
MOSFET N-CH 500V 8A I2PAK
MCH3376-TL-E
MCH3376-TL-E
onsemi
MOSFET P-CH 20V 1.5A 3MCPH
IRFR9010TRLPBF
IRFR9010TRLPBF
Vishay Siliconix
MOSFET P-CH 50V 5.3A DPAK
IRLL024NPBF
IRLL024NPBF
Infineon Technologies
MOSFET N-CH 55V 3.1A SOT223
FQPF9N90C
FQPF9N90C
onsemi
MOSFET N-CH 900V 8A TO220F
SI4362BDY-T1-E3
SI4362BDY-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 29A 8SO
TPCC8065-H,LQ(S
TPCC8065-H,LQ(S
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 13A 8TSON
AOB11N60L
AOB11N60L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 11A TO263
RDN120N25
RDN120N25
Rohm Semiconductor
MOSFET N-CH 250V 12A TO220FN

Related Product By Brand

GC1200050
GC1200050
Diodes Incorporated
CRYSTAL 12.0000MHZ 16PF SMD
FK8000005Z
FK8000005Z
Diodes Incorporated
XTAL OSC XO 80.0000MHZ CMOS SMD
ZMM5254B-7
ZMM5254B-7
Diodes Incorporated
DIODE ZENER 27V 500MW MINI MELF
ZHB6792TC
ZHB6792TC
Diodes Incorporated
TRANS 2NPN/2PNP 70V 1A SOT223
ZVN4525E6TA
ZVN4525E6TA
Diodes Incorporated
MOSFET N-CH 250V 230MA SOT-23-6
PI2EQX4432DZDEX
PI2EQX4432DZDEX
Diodes Incorporated
IC REDRIVER PCIE 4CH 48TQFN
PI3EQX8984ZLEX
PI3EQX8984ZLEX
Diodes Incorporated
IC REDRIVER PCIE 8CH 72TQFN
PI74AVC+16820AAE
PI74AVC+16820AAE
Diodes Incorporated
IC FF D-TYPE SNGL 10BIT 56TSSOP
AP9214L-AB-HSB-7
AP9214L-AB-HSB-7
Diodes Incorporated
IC BATT PROT LI-ION 1CELL 6UDFN
ZRT100GA1TC
ZRT100GA1TC
Diodes Incorporated
IC VREF SHUNT 1% SOT223
PAM2306DYPAA
PAM2306DYPAA
Diodes Incorporated
IC REG BUCK ADJ 1A DL 12WDFN
AP3427DNTR-G1
AP3427DNTR-G1
Diodes Incorporated
IC REG BUCK 10UDFN