ZVN3306ASTOA
  • Share:

Diodes Incorporated ZVN3306ASTOA

Manufacturer No:
ZVN3306ASTOA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZVN3306ASTOA Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 270MA E-LINE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:35 pF @ 18 V
FET Feature:- 
Power Dissipation (Max):625mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:E-Line (TO-92 compatible)
Package / Case:E-Line-3
0 Remaining View Similar

In Stock

-
84

Please send RFQ , we will respond immediately.

Similar Products

Part Number ZVN3306ASTOA ZVN3306ASTOB   ZVN4306ASTOA  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 270mA (Ta) 270mA (Ta) 1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V 330mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 2.4V @ 1mA 2.4V @ 1mA 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 35 pF @ 18 V 35 pF @ 18 V 350 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 625mW (Ta) 625mW (Ta) 850mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package E-Line (TO-92 compatible) E-Line (TO-92 compatible) E-Line (TO-92 compatible)
Package / Case E-Line-3 E-Line-3 E-Line-3

Related Product By Categories

SI2371EDS-T1-GE3
SI2371EDS-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 4.8A SOT-23
TJ10S04M3L,LXHQ
TJ10S04M3L,LXHQ
Toshiba Semiconductor and Storage
MOSFET P-CH 40V 10A DPAK
SQJ486EP-T1_GE3
SQJ486EP-T1_GE3
Vishay Siliconix
MOSFET N-CH 75V 30A PPAK SO-8
IPAN60R360PFD7SXKSA1
IPAN60R360PFD7SXKSA1
Infineon Technologies
MOSFET N-CH 650V 10A TO220
TK6P53D(T6RSS-Q)
TK6P53D(T6RSS-Q)
Toshiba Semiconductor and Storage
MOSFET N-CH 525V 6A DPAK
TK33S10N1L,LQ
TK33S10N1L,LQ
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 33A DPAK
IPB024N10N5ATMA1
IPB024N10N5ATMA1
Infineon Technologies
MOSFET N-CH 100V 180A TO263-7
IXFR90N30
IXFR90N30
IXYS
MOSFET N-CH 300V 75A ISOPLUS247
IPI80N06S405AKSA1
IPI80N06S405AKSA1
Infineon Technologies
MOSFET N-CH 60V 80A TO262-3
IPB60R600CPATMA1
IPB60R600CPATMA1
Infineon Technologies
MOSFET N-CH 600V 6.1A D2PAK
AUIRLS3036-7TRL
AUIRLS3036-7TRL
Infineon Technologies
MOSFET N-CH 60V 240A D2PAK
PJD25P03_L2_00001
PJD25P03_L2_00001
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M

Related Product By Brand

SMCJ160A-13
SMCJ160A-13
Diodes Incorporated
TVS DIODE 160V 259V SMC
FH2000041
FH2000041
Diodes Incorporated
CRYSTAL 20.0000MHZ 18PF SMD
FN2500035
FN2500035
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM7050 T&
DZ23C20-7-F
DZ23C20-7-F
Diodes Incorporated
DIODE ZENER ARRAY 20V SOT23-3
DMG6302UDW-7
DMG6302UDW-7
Diodes Incorporated
MOSFET BVDSS: 25V~30V SOT363 T&R
DMP1012UCB9-7
DMP1012UCB9-7
Diodes Incorporated
MOSFET P-CH 8V 10A U-WLB1515-9
PI3USB4000BZUAEX
PI3USB4000BZUAEX
Diodes Incorporated
USB2 SWITCH U-QFN2015-10
PI3B3257QE
PI3B3257QE
Diodes Incorporated
IC MUX/DEMUX 4 X 2:1 16QSOP
ZXCT1008QFTA
ZXCT1008QFTA
Diodes Incorporated
IC CURRENT MONITOR 1% SOT23-3
DML1005LDS-7
DML1005LDS-7
Diodes Incorporated
IC PWR SWITCH N-CHAN 1:1 8VDFN
AP2820FMMTR-G1
AP2820FMMTR-G1
Diodes Incorporated
IC PWR SWITCH N-CHAN 1:1 8MSOP
AP7370-50WW-7
AP7370-50WW-7
Diodes Incorporated
IC REG LINEAR 5V 300MA SOT25