ZVN2120ASTZ
  • Share:

Diodes Incorporated ZVN2120ASTZ

Manufacturer No:
ZVN2120ASTZ
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZVN2120ASTZ Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 180MA E-LINE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:85 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):700mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:E-Line (TO-92 compatible)
Package / Case:E-Line-3
0 Remaining View Similar

In Stock

-
274

Please send RFQ , we will respond immediately.

Similar Products

Part Number ZVN2120ASTZ ZVN2110ASTZ  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 100 V
Current - Continuous Drain (Id) @ 25°C 180mA (Ta) 320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 10Ohm @ 250mA, 10V 4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 85 pF @ 25 V 75 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 700mW (Ta) 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package E-Line (TO-92 compatible) E-Line (TO-92 compatible)
Package / Case E-Line-3 E-Line-3

Related Product By Categories

TSM060N03CP ROG
TSM060N03CP ROG
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 30V 70A TO252
IPB65R600C6ATMA1
IPB65R600C6ATMA1
Infineon Technologies
IPB65R600 - 650V AND 700V COOLMO
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
SI4178DY-T1-GE3
SI4178DY-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 12A 8SO
TPH2R306NH1,LQ
TPH2R306NH1,LQ
Toshiba Semiconductor and Storage
UMOS9 SOP-ADV(N) PD=170W F=1MHZ
DMT10H072LFDF-13
DMT10H072LFDF-13
Diodes Incorporated
MOSFET N-CH 100V 4A 6UDFN
IXTA6N100D2-TRL
IXTA6N100D2-TRL
IXYS
MOSFET N-CH 1000V 6A TO263
IXTH40N30
IXTH40N30
IXYS
MOSFET N-CH 300V 40A TO247
IRF3205ZSTRRPBF
IRF3205ZSTRRPBF
Infineon Technologies
MOSFET N-CH 55V 75A D2PAK
IRF3808STRRPBF
IRF3808STRRPBF
Infineon Technologies
MOSFET N-CH 75V 106A D2PAK
IPA126N10N3GXKSA1
IPA126N10N3GXKSA1
Infineon Technologies
MOSFET N-CH 100V 35A TO220-FP
APT47N65BC3G
APT47N65BC3G
Microsemi Corporation
MOSFET N-CH 650V 47A TO247

Related Product By Brand

SMAJ170CA-13-F
SMAJ170CA-13-F
Diodes Incorporated
TVS DIODE 170VWM 275VC SMA
SMBJ14A-13-F
SMBJ14A-13-F
Diodes Incorporated
TVS DIODE 14VWM 23.2VC SMB
FL3600020
FL3600020
Diodes Incorporated
CRYSTAL 36.0000MHZ 16PF SMD
FM3840005
FM3840005
Diodes Incorporated
XTAL OSC XO 38.4000MHZ CMOS SMD
FK1630004
FK1630004
Diodes Incorporated
XTAL OSC XO 16.3840MHZ CMOS SMD
SF10GG-T
SF10GG-T
Diodes Incorporated
DIODE GEN PURP 400V 1A DO41
SBRT05U20LPQ-7B
SBRT05U20LPQ-7B
Diodes Incorporated
DIODE SBR 20V 500MA X1-DFN1006-2
D3Z7V5BF-7
D3Z7V5BF-7
Diodes Incorporated
DIODE ZENER 7.44V 400MW SOD323F
74LVC1G07QSE-7
74LVC1G07QSE-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V SOT353
PI5C16861AE
PI5C16861AE
Diodes Incorporated
IC BUS SWITCH 10 X 1:1 48TSSOP
PT8A3514BWE
PT8A3514BWE
Diodes Incorporated
IRON CONTROLLER SO-8
AH173-WL-7-A
AH173-WL-7-A
Diodes Incorporated
MAGNETIC SWITCH LATCH SC59-3