ZVN2110GTC
  • Share:

Diodes Incorporated ZVN2110GTC

Manufacturer No:
ZVN2110GTC
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZVN2110GTC Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 500MA SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:75 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-3
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

-
412

Please send RFQ , we will respond immediately.

Similar Products

Part Number ZVN2110GTC ZVN2120GTC   ZVNL110GTC   ZVN2110GTA  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 200 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta) 320mA (Ta) 600mA (Ta) 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 5V, 10V 10V
Rds On (Max) @ Id, Vgs 4Ohm @ 1A, 10V 10Ohm @ 250mA, 10V 3Ohm @ 500mA, 10V 4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 2.4V @ 1mA 3V @ 1mA 1.5V @ 1mA 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - - -
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 75 pF @ 25 V 85 pF @ 25 V 75 pF @ 25 V 75 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 2W (Ta) 2W (Ta) 1.1W (Ta) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

PMV20ENR
PMV20ENR
Nexperia USA Inc.
MOSFET N-CH 30V 6A TO236AB
FQU6N25TU
FQU6N25TU
Fairchild Semiconductor
MOSFET N-CH 250V 4.4A IPAK
IXTH160N10T
IXTH160N10T
IXYS
MOSFET N-CH 100V 160A TO247
NVR1P02T1G
NVR1P02T1G
onsemi
MOSFET P-CH 20V 1A SOT-23-3
NX7002BKMB315
NX7002BKMB315
NXP USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
NVTFS002N04CTAG
NVTFS002N04CTAG
onsemi
MOSFET N-CH 40V 27A/136A 8WDFN
IXFR36N50P
IXFR36N50P
IXYS
MOSFET N-CH 500V 19A ISOPLUS247
IPP65R225C7
IPP65R225C7
Infineon Technologies
POWER FIELD-EFFECT TRANSISTOR, 1
IRF530NS
IRF530NS
Infineon Technologies
MOSFET N-CH 100V 17A D2PAK
FQPF1N60T
FQPF1N60T
onsemi
MOSFET N-CH 600V 900MA TO220F
NTLUS3192PZTAG
NTLUS3192PZTAG
onsemi
MOSFET P-CH 20V 2.2A 6UDFN
RJK4018DPK-00#T0
RJK4018DPK-00#T0
Renesas Electronics America Inc
MOSFET N-CH 400V 43A TO3P

Related Product By Brand

FL2700041
FL2700041
Diodes Incorporated
CRYSTAL 27.0000MHZ 18PF SMD
SD103CWS-7
SD103CWS-7
Diodes Incorporated
DIODE SCHOTTKY 20V 350MA SOD323
B0540W-7-G
B0540W-7-G
Diodes Incorporated
DIODE SCHOTTKY
BZX84C3V9S-7-F
BZX84C3V9S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 3.9V SOT363
UMC5NQ-7
UMC5NQ-7
Diodes Incorporated
PREBIASTRANSISTORSOT353
DDTC124XCA-7-F
DDTC124XCA-7-F
Diodes Incorporated
TRANS PREBIAS NPN 200MW SOT23-3
DMN2053UFDB-7
DMN2053UFDB-7
Diodes Incorporated
MOSFET BVDSS: 8V~24V U-DFN2020-6
DMP3021SSS-13
DMP3021SSS-13
Diodes Incorporated
MOSFET BVDSS: 25V~30V SO-8 T&R 2
PI3HDX12211ZHEX
PI3HDX12211ZHEX
Diodes Incorporated
ACTIVE DISPLAY V-QFN3590-42
ZXRE4041CFTC
ZXRE4041CFTC
Diodes Incorporated
IC VREF SHUNT 0.5% SOT23
AZ1117CR2-3.3TRG1
AZ1117CR2-3.3TRG1
Diodes Incorporated
IC REG LINEAR 3.3V 1A SOT89
AP7315-185W5-7
AP7315-185W5-7
Diodes Incorporated
IC REG LINEAR 1.85V 150MA SOT25