ZVN2110ASTZ
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Diodes Incorporated ZVN2110ASTZ

Manufacturer No:
ZVN2110ASTZ
Manufacturer:
Diodes Incorporated
Package:
Cut Tape (CT)
Datasheet:
ZVN2110ASTZ Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 320MA E-LINE
Delivery:
Payment:
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iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:75 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):700mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:E-Line (TO-92 compatible)
Package / Case:E-Line-3
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Similar Products

Part Number ZVN2110ASTZ ZVNL110ASTZ   ZVN2120ASTZ  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 200 V
Current - Continuous Drain (Id) @ 25°C 320mA (Ta) 320mA (Ta) 180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 5V, 10V 10V
Rds On (Max) @ Id, Vgs 4Ohm @ 1A, 10V 3Ohm @ 500mA, 10V 10Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 1mA 1.5V @ 1mA 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 75 pF @ 25 V 75 pF @ 25 V 85 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 700mW (Ta) 700mW (Ta) 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package E-Line (TO-92 compatible) E-Line (TO-92 compatible) E-Line (TO-92 compatible)
Package / Case E-Line-3 E-Line-3 E-Line-3

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