Diodes Incorporated-ZTX325STZ - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	1.3GHz
Noise Figure (dB Typ @ f):	5dB @ 500MHz
Gain:	53dB
Power - Max:	350mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	25 @ 2mA, 1V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	-55°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	E-Line-3, Formed Leads
Supplier Device Package:	E-Line (TO-92 compatible)

Diodes Incorporated ZTX325STZ