Diodes Incorporated-ZDT6702QTA - Transistors - Bipolar (BJT) - Arrays Product Specifications and Latest Quotes

Transistor Type:	NPN, PNP Complementary Darlington
Current - Collector (Ic) (Max):	1.75A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	1.28V @ 2mA, 1.75A
Current - Collector Cutoff (Max):	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	5000 @ 500mA, 5V / 2000 @ 500mA, 5V
Power - Max:	2.75W
Frequency - Transition:	140MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-223-8
Supplier Device Package:	SM-8

Diodes Incorporated ZDT6702QTA