Diodes Incorporated-VN10LPSTZ - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	-
Input Capacitance (Ciss) (Max) @ Vds:	60 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	-
Operating Temperature:	-
Mounting Type:	Through Hole
Supplier Device Package:	E-Line (TO-92 compatible)
Package / Case:	E-Line-3, Formed Leads

Diodes Incorporated VN10LPSTZ