VN10LFTA
  • Share:

Diodes Incorporated VN10LFTA

Manufacturer No:
VN10LFTA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
VN10LFTA Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 150MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):330mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.56
909

Please send RFQ , we will respond immediately.

Similar Products

Part Number VN10LFTA VN10LFTC  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 150mA (Ta) 150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V 60 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 330mW (Ta) 330mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

IPP045N10N3GXKSA1
IPP045N10N3GXKSA1
Infineon Technologies
MOSFET N-CH 100V 100A TO220-3
MSC040SMA120B4
MSC040SMA120B4
Microchip Technology
SICFET N-CH 1200V 66A TO247-4
IRFL9014TRPBF
IRFL9014TRPBF
Vishay Siliconix
MOSFET P-CH 60V 1.8A SOT223
STU12N60M2
STU12N60M2
STMicroelectronics
MOSFET N-CH 600V 9A IPAK
IRF614STRRPBF
IRF614STRRPBF
Vishay Siliconix
MOSFET N-CH 250V 2.7A D2PAK
TK8A50D(STA4,Q,M)
TK8A50D(STA4,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 500V 8A TO220SIS
IRF634NSPBF
IRF634NSPBF
Vishay Siliconix
MOSFET N-CH 250V 8A D2PAK
IRFS17N20DTRLP
IRFS17N20DTRLP
Infineon Technologies
MOSFET N-CH 200V 16A D2PAK
IXTH72N20T
IXTH72N20T
IXYS
MOSFET N-CH 200V 72A TO247
SUP75P05-08-E3
SUP75P05-08-E3
Vishay Siliconix
MOSFET P-CH 55V 75A TO220AB
HAT2168H-EL-E
HAT2168H-EL-E
Renesas Electronics America Inc
MOSFET N-CH 30V 30A LFPAK
RQ3E130MNTB1
RQ3E130MNTB1
Rohm Semiconductor
MOSFET N-CH 30V 13A HSMT8

Related Product By Brand

FH2600064Q
FH2600064Q
Diodes Incorporated
CRYSTAL 26.0000MHZ 10PF SMD
FN3300056
FN3300056
Diodes Incorporated
XTAL OSC XO 33.0000MHZ CMOS
FN0150023
FN0150023
Diodes Incorporated
XTAL OSC XO 1.5440MHZ CMOS SMD
JT3516303P
JT3516303P
Diodes Incorporated
TEMP COMP XO SEAM3225 T&R 3K
BAV21HWFQ-7
BAV21HWFQ-7
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
MMDT2907AQ-7-F
MMDT2907AQ-7-F
Diodes Incorporated
TRANS PNP 60V SS SOT363
ZTX705
ZTX705
Diodes Incorporated
TRANS PNP DARL 120V 1A E-LINE
DMG2302UKQ-13
DMG2302UKQ-13
Diodes Incorporated
MOSFET N-CH 20V 2.8A SOT23 T&R 1
LM2903AQS-13
LM2903AQS-13
Diodes Incorporated
IC COMP DUAL DIFFERENTIAL 8SO
AP9101CAK-BUTRG1
AP9101CAK-BUTRG1
Diodes Incorporated
IC BATT PROT LI-ION 1CELL SOT25
AUR9707AGD
AUR9707AGD
Diodes Incorporated
IC REG BUCK ADJ 1A DL 12WDFN
AZ34063DMTR-G1
AZ34063DMTR-G1
Diodes Incorporated
IC REG BUCK BST ADJ 1A 8SOIC