US3M-13
  • Share:

Diodes Incorporated US3M-13

Manufacturer No:
US3M-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
US3M-13 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 1KV 3A SMC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1.8 V @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):85 ns
Current - Reverse Leakage @ Vr:10 µA @ 1000 V
Capacitance @ Vr, F:25pF @ 4V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-214AB, SMC
Supplier Device Package:SMC
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.65
485

Please send RFQ , we will respond immediately.

Similar Products

Part Number US3M-13 US1M-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Discontinued at Digi-Key
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V
Current - Average Rectified (Io) 3A 1A
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 3 A 1.7 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 85 ns 75 ns
Current - Reverse Leakage @ Vr 10 µA @ 1000 V 5 µA @ 1000 V
Capacitance @ Vr, F 25pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case DO-214AB, SMC DO-214AC, SMA
Supplier Device Package SMC SMA
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 150°C

Related Product By Categories

CEFB203-G
CEFB203-G
Comchip Technology
DIODE GEN PURP 200V 2A DO214AA
RS1JFS MWG
RS1JFS MWG
Taiwan Semiconductor Corporation
DIODE
PMEG4010ET,215
PMEG4010ET,215
Nexperia USA Inc.
DIODE SCHOTTKY 40V 1A TO236AB
ES2JB
ES2JB
MDD
Super Fast Diode SMB 600V 2A
VS-8EVL06HM3/I
VS-8EVL06HM3/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE 600V SLIMDPAK
PMEG3020BER-QX
PMEG3020BER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BYT08P-400
BYT08P-400
STMicroelectronics
DIODE GEN PURP 400V 8A TO220AC
GP08DHE3/54
GP08DHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 800MA DO204
S8KC M6G
S8KC M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 8A DO214AB
SR810HB0G
SR810HB0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 8A DO201AD
1N4942GP-AP
1N4942GP-AP
Micro Commercial Co
DIODE GPP FAST 1A DO-41
1SS355VMFHTE-17
1SS355VMFHTE-17
Rohm Semiconductor
HIGH SPEED SWITCHING DIODE, HIGH

Related Product By Brand

3.0SMCJ85A-13
3.0SMCJ85A-13
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR SMC
SMBJ48A-13
SMBJ48A-13
Diodes Incorporated
TVS DIODE 48VWM 77.4VC SMB
FL2000058
FL2000058
Diodes Incorporated
CRYSTAL 20.0000MHZ 20PF SMD
PB5000007
PB5000007
Diodes Incorporated
XTAL OSC XO 50.0000MHZ PECL SMD
BAT43WS-7
BAT43WS-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
ZHCS400TA-79
ZHCS400TA-79
Diodes Incorporated
DIODE SCHOTTKY 40V 400MA SOD323
FZT749QTA
FZT749QTA
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT223 T
BC847BLP4-7
BC847BLP4-7
Diodes Incorporated
TRANS NPN 45V 0.1A 3DFN
DDTC124XUA-7-F
DDTC124XUA-7-F
Diodes Incorporated
TRANS PREBIAS NPN 200MW SOT323
DMN2008LFU-7
DMN2008LFU-7
Diodes Incorporated
MOSFET 2N-CHA 20V 14.5A DFN2030
PT7C5006ANEWE
PT7C5006ANEWE
Diodes Incorporated
XO CLOCK SO-8
AP9214L-AI-HSB-7
AP9214L-AI-HSB-7
Diodes Incorporated
IC BATT PROT LI-ION 1CELL 6UDFN