US1M-13-F
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Diodes Incorporated US1M-13-F

Manufacturer No:
US1M-13-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
US1M-13-F Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 1KV 1A SMA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-214AC, SMA
Supplier Device Package:SMA
Operating Temperature - Junction:-65°C ~ 150°C
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Similar Products

Part Number US1M-13-F US1D-13-F   US1G-13-F   US1J-13-F   US1K-13-F  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 200 V 400 V 600 V 800 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 1 A 1 V @ 1 A 1.3 V @ 1 A 1.7 V @ 1 A 1.7 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns 50 ns 50 ns 75 ns 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 200 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 800 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 20pF @ 4V, 1MHz 20pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA
Supplier Device Package SMA SMA SMA SMA SMA
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

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