Diodes Incorporated-UMC4NQ-7 - Transistors - Bipolar (BJT) - Arrays, Pre-Biased Product Specifications and Latest Quotes

Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	47kOhms, 10kOhms
Resistor - Emitter Base (R2):	47kOhms, 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vce Saturation (Max) @ Ib, Ic:	-
Current - Collector Cutoff (Max):	-
Frequency - Transition:	250MHz
Power - Max:	290mW
Mounting Type:	Surface Mount
Package / Case:	5-TSSOP, SC-70-5, SOT-353
Supplier Device Package:	SOT-353

Diodes Incorporated UMC4NQ-7