SF10DG-A
  • Share:

Diodes Incorporated SF10DG-A

Manufacturer No:
SF10DG-A
Manufacturer:
Diodes Incorporated
Package:
Tape & Box (TB)
Datasheet:
SF10DG-A Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 200V 1A DO41
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:950 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:10 µA @ 200 V
Capacitance @ Vr, F:75pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-41
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

-
322

Please send RFQ , we will respond immediately.

Similar Products

Part Number SF10DG-A SF10DG-T   SF10FG-A   SF10GG-A   SF10HG-A   SF10JG-A   SF10DG-B   SF10AG-A   SF10BG-A   SF10CG-A  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 300 V 400 V 500 V 600 V 200 V 50 V 100 V 150 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 1 A 950 mV @ 1 A 1.3 V @ 1 A 1.3 V @ 1 A 1.5 V @ 1 A 1.5 V @ 1 A 950 mV @ 1 A 950 mV @ 1 A 950 mV @ 1 A 950 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 35 ns 40 ns 40 ns 50 ns 50 ns 35 ns 35 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 10 µA @ 200 V 10 µA @ 200 V 10 µA @ 300 V 10 µA @ 400 V 10 µA @ 500 V 10 µA @ 600 V 10 µA @ 200 V 10 µA @ 50 V 10 µA @ 100 V 10 µA @ 150 V
Capacitance @ Vr, F 75pF @ 4V, 1MHz 75pF @ 4V, 1MHz 75pF @ 4V, 1MHz 75pF @ 4V, 1MHz 50pF @ 4V, 1MHz 50pF @ 4V, 1MHz 75pF @ 4V, 1MHz 75pF @ 4V, 1MHz 75pF @ 4V, 1MHz 75pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

DD1400
DD1400
Diotec Semiconductor
HV DIODE D3X12 14000V 0.02A
SS16LS RVG
SS16LS RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 1A SOD123HE
BYC10D-600,127
BYC10D-600,127
NXP USA Inc.
NOW WEEN - BYC10D-600 - HYPERFAS
SL36B
SL36B
SURGE
3A -60V - SMB (DO-214AA) - RECTI
AS4PK-M3/86A
AS4PK-M3/86A
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 800V 2.4A TO277A
1N5711E3/TR
1N5711E3/TR
Microchip Technology
DIODE SMALL-SIGNAL SCHOTTKY
JANTX1N6622US/TR
JANTX1N6622US/TR
Microchip Technology
RECTIFIER UFR,FRR
VS-T70HFL10S05
VS-T70HFL10S05
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 70A D-55
SS35 R7G
SS35 R7G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 3A DO214AB
RS1DL MHG
RS1DL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 800MA SUBSMA
HS3J R7G
HS3J R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
SRT13 A1G
SRT13 A1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A TS-1

Related Product By Brand

KJ3270004Z
KJ3270004Z
Diodes Incorporated
XTAL OSC XO 32.7680 KHZ LVCMOS
AL5809EV1-150
AL5809EV1-150
Diodes Incorporated
EVAL BOARD FOR AL5809 150MA
PB64
PB64
Diodes Incorporated
BRIDGE RECT 1PHASE 400V 6A PB-6
HER601-T
HER601-T
Diodes Incorporated
DIODE GEN PURP 50V 6A R6
BZX84C7V5TS-7-F
BZX84C7V5TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 7.5V SOT363
ZXTD718MCTA
ZXTD718MCTA
Diodes Incorporated
TRANS 2PNP 20V 3.5A 8DFN
BC847BVNQ-7
BC847BVNQ-7
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT56
ZXMN2A01E6TA
ZXMN2A01E6TA
Diodes Incorporated
MOSFET N-CH 20V 2.5A SOT23-6
PI3HDX412BDZBEX
PI3HDX412BDZBEX
Diodes Incorporated
IC INTERFACE SPECIALIZED 56TQFN
74AHCT1G04SE-7
74AHCT1G04SE-7
Diodes Incorporated
IC INVERTER 1CH 1-INP SOT353
APX803L20-31SA-7
APX803L20-31SA-7
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23
LSP3700AAAE
LSP3700AAAE
Diodes Incorporated
IC REGULATOR