SF10BG-A
  • Share:

Diodes Incorporated SF10BG-A

Manufacturer No:
SF10BG-A
Manufacturer:
Diodes Incorporated
Package:
Tape & Box (TB)
Datasheet:
SF10BG-A Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 100V 1A DO41
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:950 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:10 µA @ 100 V
Capacitance @ Vr, F:75pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-41
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

-
121

Please send RFQ , we will respond immediately.

Similar Products

Part Number SF10BG-A SF10BG-T   SF10CG-A   SF10DG-A   SF10FG-A   SF10GG-A   SF10HG-A   SF10JG-A   SF10BG-B   SF10AG-A  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 150 V 200 V 300 V 400 V 500 V 600 V 100 V 50 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 1 A 950 mV @ 1 A 950 mV @ 1 A 950 mV @ 1 A 1.3 V @ 1 A 1.3 V @ 1 A 1.5 V @ 1 A 1.5 V @ 1 A 950 mV @ 1 A 950 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 35 ns 35 ns 35 ns 40 ns 40 ns 50 ns 50 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 10 µA @ 100 V 10 µA @ 100 V 10 µA @ 150 V 10 µA @ 200 V 10 µA @ 300 V 10 µA @ 400 V 10 µA @ 500 V 10 µA @ 600 V 10 µA @ 100 V 10 µA @ 50 V
Capacitance @ Vr, F 75pF @ 4V, 1MHz 75pF @ 4V, 1MHz 75pF @ 4V, 1MHz 75pF @ 4V, 1MHz 75pF @ 4V, 1MHz 75pF @ 4V, 1MHz 50pF @ 4V, 1MHz 50pF @ 4V, 1MHz 75pF @ 4V, 1MHz 75pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

ES2JA R3G
ES2JA R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO214AC
LL4448
LL4448
Diotec Semiconductor
DIODE SOD-80 100V 0.15A 4NS
S2D_R1_00001
S2D_R1_00001
Panjit International Inc.
SURFACE MOUNT RECTIFIER
VS-6ESH01HM3/86A
VS-6ESH01HM3/86A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 6A TO277A
VS-15EVL06HM3/I
VS-15EVL06HM3/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE 600V SLIMDPAK
UG4D-M3/73
UG4D-M3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 4A DO201AD
MBRM120ET1
MBRM120ET1
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
1N5400-E3/73
1N5400-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 3A DO201AD
MUR480-TP
MUR480-TP
Micro Commercial Co
DIODE GEN PURP 800V 4A DO201AD
VS-8ETH03-N3
VS-8ETH03-N3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 300V 8A TO220AC
F1T5GHA1G
F1T5GHA1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A TS-1
B320BE-13
B320BE-13
Diodes Incorporated
DIODE SCHOTTKY 20V 3A SMB

Related Product By Brand

DFLT22AQ-7
DFLT22AQ-7
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR PDI
FL4800061
FL4800061
Diodes Incorporated
CRYSTAL 48.0000MHZ 18PF SMD
F91600004
F91600004
Diodes Incorporated
CRYSTAL CERAMIC GLASS5032 T&R 1K
FK2700016
FK2700016
Diodes Incorporated
XTAL OSC XO 27.0000MHZ CMOS SMD
FK3300006
FK3300006
Diodes Incorporated
XTAL OSC XO 33.0000MHZ CMOS SMD
S3BB-13-F
S3BB-13-F
Diodes Incorporated
DIODE GEN PURP 100V 3A SMB
DZ9F9V1S92-7
DZ9F9V1S92-7
Diodes Incorporated
DIODE ZENER 9.1V 200MW SOD923
AP2331TDW-7
AP2331TDW-7
Diodes Incorporated
IC LOAD SWITCH SC59
AP2820AMTR-G1
AP2820AMTR-G1
Diodes Incorporated
IC PWR SWITCH N-CHAN 1:1 8SOIC
AP1635SL-13
AP1635SL-13
Diodes Incorporated
IC REG BUCK ADJUSTABLE 1.2A 8SOP
AP7333-28SAG-7
AP7333-28SAG-7
Diodes Incorporated
IC REG LINEAR 2.8V 300MA SOT23-3
AZ2940S-3.3TRG1
AZ2940S-3.3TRG1
Diodes Incorporated
IC REG LINEAR 3.3V 1A TO263