SBR02U100LPQ-7B
  • Share:

Diodes Incorporated SBR02U100LPQ-7B

Manufacturer No:
SBR02U100LPQ-7B
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
SBR02U100LPQ-7B Datasheet
ECAD Model:
-
Description:
DIODE SBR 100V 250MA 2DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Super Barrier
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):250mA
Voltage - Forward (Vf) (Max) @ If:800 mV @ 200 mA
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:0402 (1006 Metric)
Supplier Device Package:X1-DFN1006-2
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.18
679

Please send RFQ , we will respond immediately.

Similar Products

Part Number SBR02U100LPQ-7B SBR02U100LPQ-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
Diode Type Super Barrier Super Barrier
Voltage - DC Reverse (Vr) (Max) 100 V 100 V
Current - Average Rectified (Io) 250mA 250mA
Voltage - Forward (Vf) (Max) @ If 800 mV @ 200 mA 800 mV @ 200 mA
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Surface Mount
Package / Case 0402 (1006 Metric) 0402 (1006 Metric)
Supplier Device Package X1-DFN1006-2 X1-DFN1006-2
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

GS2004HE_R1_00001
GS2004HE_R1_00001
Panjit International Inc.
SURFACE MOUNT RECTIFIER
BAW56W/ZL,115
BAW56W/ZL,115
Nexperia USA Inc.
NEXPERIA BAW56W - RECTIFIER DIOD
1N3170
1N3170
Solid State Inc.
DO9 240 AMP SILICON RECTIFIER
JANTX1N3595-1
JANTX1N3595-1
Microchip Technology
DIODE GEN PURP 125V 150MA DO35
BAV21W-E3-18
BAV21W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
VS-65APF12LHM3
VS-65APF12LHM3
Vishay General Semiconductor - Diodes Division
DIODES - TO-247-E3
VS-40HFLR10S05
VS-40HFLR10S05
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 40A DO203AB
VS-40HFL40S05
VS-40HFL40S05
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 40A DO203AB
JANTXV1N5622US
JANTXV1N5622US
Microchip Technology
DIODE GEN PURP 1KV 1A D5A
8ETU04S
8ETU04S
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 8A D2PAK
DGS9-025AS
DGS9-025AS
IXYS
DIODE SCHOTTKY 250V 12A TO252AA
SS22L RTG
SS22L RTG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 2A SUB SMA

Related Product By Brand

3.0SMCJ24CA-13
3.0SMCJ24CA-13
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR SMC
KX2513B0032.768000
KX2513B0032.768000
Diodes Incorporated
XTAL OSC XO 32.7680 KHZ CMOS SMD
NX71C50010
NX71C50010
Diodes Incorporated
XTAL OSCILLATOR XO SMD
BAS16Q-7-F
BAS16Q-7-F
Diodes Incorporated
FAST SWITCHING DIODE SOT23 T&R 3
SBG1025L-T-F
SBG1025L-T-F
Diodes Incorporated
DIODE SCHOTTKY 25V 10A D2PAK
FZT603QTA
FZT603QTA
Diodes Incorporated
TRANS NPN DARL 80V 2A SOT223-3
FZT1151ATC
FZT1151ATC
Diodes Incorporated
TRANS PNP 40V 3A SOT223-3
ZVN3310ASTZ
ZVN3310ASTZ
Diodes Incorporated
MOSFET N-CH 100V 200MA E-LINE
DMTH10H010SCT
DMTH10H010SCT
Diodes Incorporated
MOSFET N-CH 100V 100A TO220AB
PI2USB3212ZHE
PI2USB3212ZHE
Diodes Incorporated
IC MUX/DEMUX 1X2 28TQFN
PI3VDP411LSTZBE
PI3VDP411LSTZBE
Diodes Incorporated
IC INTERFACE SPECIALIZED 48TQFN
ZXRE125DFTC
ZXRE125DFTC
Diodes Incorporated
IC VREF SHUNT 1% SOT23