PR3004G-T
  • Share:

Diodes Incorporated PR3004G-T

Manufacturer No:
PR3004G-T
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
PR3004G-T Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 400V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1.3 V @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):250 ns
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:50pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

-
269

Please send RFQ , we will respond immediately.

Similar Products

Part Number PR3004G-T PR3005G-T   PR3006G-T   PR3007G-T   PR1004G-T   PR2004G-T   PR3001G-T   PR3002G-T   PR3003G-T   PR3004-T  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Obsolete Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 600 V 800 V 1000 V 400 V 400 V 50 V 100 V 200 V 400 V
Current - Average Rectified (Io) 3A 3A 3A 3A 1A 2A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 3 A 1.3 V @ 3 A 1.3 V @ 3 A 1.3 V @ 3 A 1.3 V @ 1 A 1.3 V @ 2 A 1.3 V @ 3 A 1.3 V @ 3 A 1.3 V @ 3 A 1.2 V @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 250 ns 250 ns 500 ns 500 ns 150 ns 150 ns 150 ns 150 ns 150 ns 150 ns
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 800 V 5 µA @ 1000 V 5 µA @ 400 V 5 µA @ 400 V 5 µA @ 50 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 400 V
Capacitance @ Vr, F 50pF @ 4V, 1MHz 50pF @ 4V, 1MHz 50pF @ 4V, 1MHz 50pF @ 4V, 1MHz 15pF @ 4V, 1MHz 35pF @ 4V, 1MHz 50pF @ 4V, 1MHz 50pF @ 4V, 1MHz 50pF @ 4V, 1MHz 50pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-204AL, DO-41, Axial DO-204AC, DO-15, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD DO-201AD DO-41 DO-15 DO-201AD DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

PMEG100V080ELPDZ
PMEG100V080ELPDZ
Nexperia USA Inc.
DIODE SCHOTTKY 100V 8A CFP15
GB05MPS33-263
GB05MPS33-263
GeneSiC Semiconductor
SIC SCHOTTKY 3300V 5A TO-263-7
STTH112U
STTH112U
STMicroelectronics
DIODE GEN PURP 1.2KV 1A SMB
STTH2L06A
STTH2L06A
STMicroelectronics
DIODE GEN PURP 600V 2A SMA
2A06G
2A06G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 2A DO204AC
1N6481HE3/97
1N6481HE3/97
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO213AB
SE50PADHM3/I
SE50PADHM3/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 5A DO221BC
STPSC20065CWL
STPSC20065CWL
STMicroelectronics
DFD THYR TRIAC & RECTIFIER
SE70PDHM3/87A
SE70PDHM3/87A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2.9A TO277A
MUR320SHR7G
MUR320SHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
SRAF1060HC0G
SRAF1060HC0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 10A ITO220AC
HER153G
HER153G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1.5A 200V DO-15

Related Product By Brand

1N4448HWT-7
1N4448HWT-7
Diodes Incorporated
DIODE GEN PURP 80V 125MA SOD523
BZX84B47-7-F
BZX84B47-7-F
Diodes Incorporated
DIODE ZENER 47V SOT23
ZTX614
ZTX614
Diodes Incorporated
TRANS NPN DARL 100V 0.8A E-LINE
BCX54TA
BCX54TA
Diodes Incorporated
TRANS NPN 45V 1A SOT89-3
FZT491AQTA
FZT491AQTA
Diodes Incorporated
TRANS NPN 40V 1A SOT223
DN0150BLP4-7
DN0150BLP4-7
Diodes Incorporated
TRANS NPN 50V 0.1A 3DFN
PI49FCT3807DQE
PI49FCT3807DQE
Diodes Incorporated
IC CLK BUFFER 1:10 156MHZ 20QSOP
PI3HDX414FCEE
PI3HDX414FCEE
Diodes Incorporated
IC INTERFACE SPECIALIZED 80LQFP
AP358NL-U
AP358NL-U
Diodes Incorporated
IC OPAMP GP 1MHZ 8DIP
AZ7027ZTR-E1
AZ7027ZTR-E1
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL TO92
AP7341D-31FS4-7
AP7341D-31FS4-7
Diodes Incorporated
IC REG LINEAR 3.1V 300MA 4DFN
AP1084KG-13
AP1084KG-13
Diodes Incorporated
IC REG LINEAR POS ADJ 5A TO263